Wettability Study of SiC in Correlation with XPS Analysis

Stambouli, Valérie; Chaussende, Didier; Anikin, Mikhail; Berthomé, G.; Thoreau, V.; Joud, J.C.

doi:10.4028/www.scientific.net/msf.457-460.423

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…In a first part, we have check the efficiency of the functionalization process on the 6H-SiC wafer at different steps of the process, notably after silanisation and after DNA hybridization. After silanisation, the surface exhibits a typical contact angle in the range of 46-49° [6,7]. But this measurement only reveals a macroscopic state of the surface polarity and should be completed by chemical analyses.…”

Section: Resultsmentioning

confidence: 99%

First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications

Fradetal

Stambouli

Bano

et al. 2013

MSF

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DNA biosensors based on silicon carbide nanowire bioFET (SiC NW bioFET) benefit from both biocompatibility and semiconducting properties of SiC. One of the device realization key points is the functionalization of the SiC NW. This process is composed of two main steps: silanization and DNA grafting. It has been successfully carried out on both SiC single crystals and SiC nanopillars. Evidences of DNA detection are given by X-Ray photoelectron Spectroscopy (XPS) and fluorescence microscopy.

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Section: Resultsmentioning

confidence: 99%

First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications

Fradetal

Stambouli

Bano

et al. 2013

MSF

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“…The first ͑named peak 1 in the following͒, at 285 eV ͑vs 284.6 eV in theory for pure carbon͒, is associated with the C-C and C-H bindings of carbon blacks. 29,39 The slight positive shift in BE for such peak may follow the partial oxidation of the carbon substrate or its interaction with the Pt particles; it does not evolve upon aging. The second ͑peak 2͒, at 293 eV, is due to the C-F bindings, 29,40 and is thus probably linked to the presence of PTFE, used as hydrophobic binder.…”

Section: Resultsmentioning

confidence: 99%

Membrane and Active Layer Degradation upon PEMFC Steady-State Operation

Guilminot

Corcella

Chatenet

et al. 2007

J. Electrochem. Soc.

181

115

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We studied proton exchange membrane fuel cell membrane electrode assemblies ͑MEAs͒ degradation after fuel-cell operation. Anode and cathode pronounced degradation was monitored by chemical ͓energy dispersive spectrometry ͑EDS͒, X-ray photoelectron spectroscopy ͑XPS͔͒, physical ͓scanning electron microscopy ͑SEM͒, transmission electron microscopy͔, and electrochemical ͑ultramicroelectrode with cavity͒ techniques. Aged MEAs underwent severe redistribution of most elements ͑Pt, C, F͒, coupled to a dramatic change of Pt particles shape, mean particle size and density over the carbon substrate. Among the various scenarios for Pt redistribution, Pt dissolution into Pt z+ species and transport in the ionomer or the proton exchange membrane play important roles. The Pt z+ dissolution/transport is likely favored by activators/ligands ͑For SO x -containing species͒ originating from the alteration of the polymers contained in the MEA. From SEM observations, the source of Pt z+ species is the cathode, while EDS and XPS show some SO x -and F-containing species origin from the anode. Local chemical analyses ͑SEM-EDS and XPS͒ revealed the excess Pt monitored in aged MEAs is associated with F excess. For instrumental limitation concerns, we could not detect the S element, but SO x -containing species could also act as counter ions during Pt z+ transport within the MEA. Pt corrosion/ redistribution is associated with the decrease of Pt-active area as revealed by CO ad -stripping voltammograms.

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Effect of Ferric Nitrate on Semi-Insulating 4H-SiC (0001) Chemical Mechanical Polishing

Wang¹,

Liu²,

Zhang³

et al. 2022

ECS J. Solid State Sci. Technol.

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Semi-insulating 4H-SiC(0001) has high hardness and high chemical inertness, making it difficult to obtain high material removal rates during chemical mechanical polishing (CMP). In this paper, the role of chemical additive ferric nitrate in semi-insulating 4H-SiC(0001) CMP with α-alumina as abrasive and KMnO4 as oxidant is discussed. The results showed that 0.5 wt% ferric nitrate can increase the removal rate of semi-insulating 4H-SiC(0001) by 34%, while the semi-insulating 4H-SiC(0001) surface roughness Ra was reduced from 0.123 to 0.110 nm. The key point was that the coefficient of friction of the polishing slurry was effectively reduced, which was beneficial to the ploughing effect of the α-alumina abrasive with vermicular thin section morphology which had the highest removal rate. In addition，the chemical composition of 4H-SiC (0001) corrosion layer was analyzed by X-ray photoelectron spectroscopy under different corrosion conditions. Si 2P spectrum analysis showed that O atoms only attack C atoms to produce Si-C-O structure under acidic conditions, whereas, with the addition of ferric nitrate, O atoms not only attacked C atoms, but also attacked Si atoms to produce softer SiO2 and Si-Ox-Cy structures. The chemical mechanical polishing mechanism of Semi-insulating 4H-SiC (0001) is also given.

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Wettability Study of SiC in Correlation with XPS Analysis

Cited by 4 publications

References 11 publications

First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications

First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications

Membrane and Active Layer Degradation upon PEMFC Steady-State Operation

Effect of Ferric Nitrate on Semi-Insulating 4H-SiC (0001) Chemical Mechanical Polishing

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