Wetting and adhesion of Si on Si3N4 and BN substrates

Drevet, B.; Voytovych, R.; Israel, R.; Eustathopoulos, N.

doi:10.1016/j.jeurceramsoc.2009.01.024

Cited by 65 publications

(24 citation statements)

References 15 publications

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“…The contact surface of h-BN substrate before the test was subjected to a gentle mechanical polishing on a piece of office paper in order to obtain the initial surface roughness of r a $ 150 nm (the surface profile was measured by NT-MDT NTEGRA Spectra scanning probe microscope-results are not shown in the paper). Contrary to previous reports (Ref 6,8,12), diamond paste was not used at any stage of polishing of h-BN substrates.…”

Section: Methodsmentioning

confidence: 96%

“…It should be also noted that in both cited papers (Ref 6,12), the authors declared that during the substrates surface preparation both silicon carbide grinding papers and diamond pastes of different fractions were applied. By taking into account the fact that h-BN is very soft, we suspect that the SiC and diamond particles might be embedded in the h-BN surface upon polishing steps.…”

Section: Reactivity Inmentioning

confidence: 99%

“…It was recognized that the involved mechanism of interaction between molten silicon and ionocovalent oxides (Al 2 O 3 , SiO 2 , MgO, ZrO 2 ) is based on a partial dissolution of a substrate, leading to the oversaturation of the melt with oxygen followed by reprecipitation of SiO 2 product at the interface during cooling (Ref 8). The only exception among all examined Si/ceramic systems is hexagonal boron nitride (h-BN), a ceramic for which non-wetting behavior of Si is observed up to 1500°C (Ref [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

Polkowski

Sobczak

Nowak

et al. 2017

J. of Materi Eng and Perform

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For a successful implementation of newly proposed silicon-based latent heat thermal energy storage systems, proper ceramic materials that could withstand a contact heating with molten silicon at temperatures much higher than its melting point need to be developed. In this regard, a non-wetting behavior and low reactivity are the main criteria determining the applicability of ceramic as a potential crucible material for long-term ultrahigh temperature contact with molten silicon. In this work, the wetting of hexagonal boron nitride (h-BN) by molten silicon was examined for the first time at temperatures up to 1750°C. For this purpose, the sessile drop technique combined with contact heating procedure under static argon was used. The reactivity in Si/h-BN system under proposed conditions was evaluated by SEM/EDS examinations of the solidified couple. It was demonstrated that increase in temperature improves wetting, and consequently, non-wetting-to-wetting transition takes place at around 1650°C. The contact angle of 90°± 5°is maintained at temperatures up to 1750°C. The results of structural characterization supported by a thermodynamic modeling indicate that the wetting behavior of the Si/h-BN couple during heating to and cooling from ultrahigh temperature of 1750°C is mainly controlled by the substrate dissolution/reprecipitation mechanism.

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Section: Methodsmentioning

confidence: 96%

Section: Reactivity Inmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

Polkowski

Sobczak

Nowak

et al. 2017

J. of Materi Eng and Perform

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“…The only exception is hc-BN, a ceramic for which non-wetting behaviour of Si is observed. However, for this ceramic, boron contamination leads to overdoping of silicon (hundreds of ppm) incompatible with applications in PV-silicon [36]. In the absence of a satisfactory dense material crucible, photovoltaic silicon ingots are currently grown in SiO2 crucibles coated with a silicon nitride powder, which acts as an interface releasing agent between silicon and the crucible.…”

Section: Wetting In Infiltrationmentioning

confidence: 99%

Wetting by Liquid Metals—Application in Materials Processing: The Contribution of the Grenoble Group

Eustathopoulos

2015

Metals

133

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Abstract:The wettability of ceramics by liquid metals is discussed from both the fundamental point of view and the point of view of applications. The role of interfacial reactions (simple dissolution of the solid in the liquid or formation of a layer of a new compound) is illustrated and analysed. Several results are presented in order to illustrate the role of wettability in materials processing, namely infiltration processing, joining dissimilar materials by brazing and selecting crucibles for crystallising liquid metals and semiconductors. The review includes results obtained during the last 15 years mainly, but not only, by the Grenoble group.

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“…Whalen et al [10] showed that hot pressed Si 3 N 4 gave wetting angles of 43-101 in vacuum, and Drevet et al [11] found that sintered Si 3 N 4 had a wetting angle of 821 which decreased to 491 over time in argon. The non-wetting behavior between silicon and Si 3 N 4 was therefore said to be due to the SiO 2 /SiO x N y on the surface of the Si 3 N 4 .…”

Section: Article In Pressmentioning

confidence: 99%

Influence of oxidation on the wetting behavior of liquid silicon on Si3N4-coated substrates

Brynjulfsen

Bakken

Tangstad

et al. 2010

Journal of Crystal Growth

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Wetting and adhesion of Si on Si3N4 and BN substrates

Cited by 65 publications

References 15 publications

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

Wetting Behavior and Reactivity of Molten Silicon with h-BN Substrate at Ultrahigh Temperatures up to 1750 °C

Wetting by Liquid Metals—Application in Materials Processing: The Contribution of the Grenoble Group

Influence of oxidation on the wetting behavior of liquid silicon on Si3N4-coated substrates

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