This paper reports a fabrication process for the deposition of a polymer insulation layer on the sidewall of through silicon vias in wafer level packaging. The novolac resin based glue was used as precursor to prepare the insulation layer. The glue is a Newtonian fluid and has low viscosity (24 mPa*s @ 100 l/s) as well as low contact angle (25.9 o ) to silicon. The resultant polymer insulation layer has a shearing strength as high as 25.8 Kg/mm 2 . Furthermore, the polymer insulation layer exhibits good uniformity in thickness and roughness over the whole 8'' wafer. On the conformal coating of the polymer insulation layer, the Ti/Cu seed layer and Cu conductive layer were fabricated by PVD and electroplating. Therefore, all the results show that the polymer materials could be a reliable and economical solution for the TSV insulator in the view of wafer level packaging.
IntroductionThree dimensional (3D) integration circuit technology affords significant promise to release the power, improve the performance and computational tradeoffs inherent in conventional planar circuit topologies, and makes through silicon via (TSV) appear to be one of the greatest technology challenges, inspiringly, the TSV technology has been successfully applied in CMOS image sensors (CIS) widely [1,2]. However, the aspect ratio of TSV for CIS is much smaller than that for interposer. Therefore, there are several options for fabricating conformal insulation layer on wafer level packaging.