Wetting of silicon carbide by binary Si-Ti and Si-Cr alloys

Yupko, V. L.; Gnesin, G. G.

doi:10.1007/bf00790688

Cited by 6 publications

(5 citation statements)

References 1 publication

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“…Element mapping of SAC‐1.5 wt% Ti/SiC interface shows that Ti was accumulated on the SAC‐Ti/SiC interface, as shown in Figure B. EDS analysis reveals the new phase marked A, located in the continuous reaction layer, to be TiC, and the similar results were reported by Nomura et al . The XRD pattern of surface near SiC further confirmed the existence of TiC and Ti 5 Si 3 , as shown in Figure .…”

Section: Resultssupporting

confidence: 82%

“…The wettability, reactivity, and surface energy of SiC ceramic were analyzed by Liu et al, attributing the good wetting behavior to the presence of adsorption phenomena and reaction/dissolution phenomena between liquid phase and solid substrate. The wetting process and spreading kinetics of AgCuTi filler and CuTi filler on SiC were analyzed in literatures . Naka et al studied the effect of Ti addition in copper on the wetting behavior on silicon carbide.…”

Section: Introductionmentioning

confidence: 99%

“…At 1373 K, the equilibrium angle decreased to 7° using Cu–Ti alloys with Ti containing larger than 30 at% and they attributed this enhanced wetting phenomena to the formation of interface products TiC and Ti 3 SiC 2 . Nomura et al analyzed the nanostructure around the wetting triple line in the Ag–Cu–Ti/SiC reactive wetting system, finding layered reaction production were observed consisting of an upper Ti 5 Si 3 and the lower TiC layer. The microstructure or mechanical properties of brazed joints SiC/SiC using Cu–Ti or Ag–Cu–Ti filler have been studied in literatures .…”

Section: Introductionmentioning

confidence: 99%

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Effect of Ti addition on the wetting and brazing of Sn0.3Ag0.7Cu filler on SiC ceramic

Song

et al. 2018

J Am Ceram Soc

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The wetting behavior of Sn0.3Ag0.7Cu (SAC) filler with the addition of Ti on SiC ceramic was investigated using sessile drop method. SiC/SiC was brazed by SAC‐Ti filler with different Ti content at 1223 K (950°C) for 10 minutes. The wettability of SAC‐Ti filler on SiC was significantly enhanced with the addition of Ti. The contact angle decreased at first and then increased with increasing Ti content. The lowest contact angle of 9° was obtained with SAC‐1.5Ti (wt%) filler. When Ti content further increased to 2.0 wt%, the contact angle increased, due to the intense reaction of Ti–Sn. The reaction between Ti and SiC controlled the wetting behavior of SAC‐Ti on the SiC substrate and the reaction products such as TiC and Ti5Si3 were formed. The wetting of SAC‐Ti on SiC was reaction‐controlled. Interfacial reaction products TiC and Ti5Si3 were observed. The wetting activation energy in spreading stage was calculated to be 129.3 kJ/mol. Completely filled SiC/SiC joints were obtained using the filler with Ti content higher than 0.5 wt%. The fillet height increased firstly then decreased with mounting Ti content. The shear strength of joints increased first with the addition of Ti then decreased with Ti content increasing to 2.0 wt%. The highest shear strength of 35.7 MPa was obtained with SAC‐1.5 Ti (wt%) filler.

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Section: Resultssupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Ti addition on the wetting and brazing of Sn0.3Ag0.7Cu filler on SiC ceramic

Song

et al. 2018

J Am Ceram Soc

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“…For mono-as well as polycrystalline a-Si, the contact angle (h) values were quite similar, i.e., approximately 38 deg at temperatures near the melting point of silicon. This value agreed reasonably well with the results reported by Whalen and Anderson [5] (40 ± 5 deg in vacuum at 1750 K (1477°C)), Naidich et al [6] (36 deg in vacuum at 1750 K (1477°C)), and Yupko and Gnesin [7] (33 to 37 deg in vacuum at 1720 K (1447°C)). A similar value for the contact angle was reported by Li and Hausner [8,9] (38 deg at 1703 K (1430°C)).…”

Section: Introductionsupporting

confidence: 91%

Initial Wetting and Spreading Rates Between SiC and CaO-SiO2-MnO Slag

Park

Jeon

Lee

et al. 2016

Metall Mater Trans B

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The wetting of CaO-SiO 2 -MnO slag on silicon carbide was studied with a variety of slag compositions at 1823 K (1550°C). Wetting experiments were performed by the dispensed drop technique. We observed complete wetting of the slag on SiC (within 1 second) without a bubble reaction regardless of the basicity (=CaO/SiO 2 = C/S ratio). However, after 8 seconds, the bubble reaction was observed under conditions of C/S = 0.8 and 1.1, whereas it was not observed at temperatures lower than 1823 K (1550°C). The contact angle was independent of MnO content, while the spreading rate increased with the increasing MnO content at the early stage of wetting. Inertial force acts on the early stage of spreading, and viscous force acts with lower MnO content due to higher viscosity. The low-viscosity slag did not fit with the nonreactive viscous model. However, the high-viscosity slag fitted the model well.

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“…This is due to the fact that silica has a surface energy lower than that of SiC. Values for the surface energy of SiC, additional to those reported by Barsoum and Ownby, 19 have been given by Allen and Kingery, 18 Yupko and Gnesin, 20 and Bruce. 21 Allen and Kingery 18 estimated a surface energy of 0.84 J/m 2 for SiC at 1200°C from sessile drop experiments involving molten tin under vacuum.…”

Section: (2) Wettability Studiesmentioning

confidence: 89%

Wettability of Silica Substrates by Silver–Copper Based Brazing Alloys inVacuo

López-Cuevas¹,

Jones

Atkinson

2000

Journal of the American Ceramic Society

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The sessile drop method has been used to determine the time dependence of the contact angle at 850°C in vacuo for Ag-28 wt% Cu, Ag-35 wt% Cu-1.5 wt% Ti, and Ag-27 wt% Cu-12 wt% In-2 wt% Ti on vitreous and devitrified fused quartz substrates. Nonwetting behavior ( > 90°) was observed for Ag-28 wt% Cu on both substrates with no evident effect of time at temperature. The silica substrate structure, whether crystalline or amorphous, as well as its surface condition, whether smooth or rough, made no significant difference. In contrast, with Ag-35 wt% Cu-1.5 wt% Ti and Ag-27 wt% Cu-12 wt% In-2 wt% Ti the contact angle continuously decreased with time for both silica substrates, and the structure and surface condition of the substrates had a negligible effect in the case of Ag-27 wt% Cu-12 wt% In-2 wt% Ti, which produced essentially the same contact angles on both silica substrates at a given time of hold at 850°C. The contact angles produced by Ag-35 wt% Cu-1.5 wt% Ti on devitrified fused quartz were consistently higher than those produced on the vitreous substrates, with increasing holding time at 850°C. This is attributable to the presence of extensive cracks in the ␣-cristobalite layer at the surface of the devitrified substrates, which obstruct wetting and spreading. These results, when correlated with the wettability of preoxidized silicon carbide by the same alloys reported in previous work, could account for the adverse effect on wetting of the high-temperature silica films formed on the surface of the SiC in that work.

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Wetting of silicon carbide by binary Si-Ti and Si-Cr alloys

Cited by 6 publications

References 1 publication

Effect of Ti addition on the wetting and brazing of Sn0.3Ag0.7Cu filler on SiC ceramic

Effect of Ti addition on the wetting and brazing of Sn0.3Ag0.7Cu filler on SiC ceramic

Initial Wetting and Spreading Rates Between SiC and CaO-SiO2-MnO Slag

Wettability of Silica Substrates by Silver–Copper Based Brazing Alloys inVacuo

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