Wetting properties of titanium oxides, oxynitrides and nitrides obtained by DC and pulsed magnetron sputtering and cathodic arc evaporation

Čolović, Božana; Kisić, Danilo; Jokanović, Bojan; Rakočević, Zlatko Lj.; Nasov, Ilija; Petkoska, Anka Trajkovska; Jokanović, Vukoman

doi:10.2478/msp-2019-0031

Cited by 29 publications

(12 citation statements)

References 31 publications

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“…Similarly, α = 25°(L m /L b = 0.55) can account for the observed breaking of GaN NWs on GaN (figure 5(d)). These values are reasonably close to reported water wetting angles on TiN (32° [76]) and GaN (40° [74]), taking into account the fact that the droplet itself is likely deformed in the presence of many NWs. We thus conclude that NW breaking is initiated in the vicinity of droplet edges.…”

Section: Mechanical Instability Of Ultrathin Nwssupporting

confidence: 89%

“…Compared to the case described in [70], we deal here with much shorter wires, which can make the assumption of a horizontal liquid surface not valid anymore. Since water does not wet either TiN or GaN substrate surfaces [74,76], it is reasonable to assume that water has already assembled in droplets when the liquid surface comes in contact with the NW tip [see figure 6(b)]. The inclination angle α of the liquid surface at the NW tip may thus take any value between 0°and Θ, with Θ the water wetting angle on the NW substrate surface.…”

Section: Mechanical Instability Of Ultrathin Nwsmentioning

confidence: 99%

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A route for the top-down fabrication of ordered ultrathin GaN nanowires

et al. 2023

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We introduce a facile route for the top-down fabrication of ordered arrays of GaN nanowires with aspect ratios exceeding 10 and diameters below 20 nm. Highly uniform thin GaN nanowires are first obtained by lithographic patterning a bilayer Ni/SiNx hard mask, followed by a combination of dry and wet etching in KOH. The SiNx is found to work as an etch stop during wet etching, which eases reproducibility. Arrays with nanowire diameters down to (33 ± 5) nm can be achieved with a uniformity suitable for photonic applications. Next, a scheme for digital etching is demonstrated to further reduce the nanowire diameter down to 5 nm. However, nanowire breaking or bundling is observed for diameters below ≈ 20 nm, an effect that is associated to capillary forces acting on the nanowires during sample drying in air. Explicit calculations of the nanowire buckling states under capillary forces indicate that nanowire breaking is favored by the incomplete wetting of water on the substrate surface during drying. The observation of intense nanowire photoluminescence at room-temperature indicates good compatibility of the fabrication route with optoelectronic applications. The process can be principally applied to any GaN/SiNx nanostructures and allows regrowth after removal of the SiNx mask.

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Section: Mechanical Instability Of Ultrathin Nwssupporting

confidence: 89%

Section: Mechanical Instability Of Ultrathin Nwsmentioning

confidence: 99%

A route for the top-down fabrication of ordered ultrathin GaN nanowires

et al. 2023

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“…In particular, titanium oxynitrides are widely used in medicine and in chemical industries because of the excellent combination of chemical and mechanical properties [38,55]. To our knowledge, till now, there is only one reference about titanium oxynitride coatings produced by cathodic arc evaporation, which compares the wettability of the coatings deposited either by cathodic arc evaporation or by magnetron sputtering [56]. Thus, we anticipate that the titanium nitride and the isostructural titanium oxynitride, with low oxygen content (TiNO), can assist in achieving low-cost and efficient bilayer, which preserves the superior properties of the component layers in relation to the adhesion to the substrate and the corrosion resistance.…”

Section: Introductionmentioning

confidence: 99%

In Vitro Corrosion of Titanium Nitride and Oxynitride-Based Biocompatible Coatings Deposited on Stainless Steel

et al. 2020

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The reactive cathodic arc deposition technique was used to produce Ti nitride and oxynitride coatings on 304 stainless steel substrates (SS). Both mono (SS/TiN, SS/TiNO) and bilayer coatings (SS/TiN/TiNO and SS/TiNO/TiN) were investigated in terms of elemental and phase composition, microstructure, grain size, morphology, and roughness. The corrosion behavior in a solution consisting of 0.10 M NaCl + 1.96 M H2O2 was evaluated, aiming for biomedical applications. The results showed that the coatings were compact, homogeneously deposited on the substrate, and displaying rough surfaces. The XRD analysis indicated that both mono and bilayer coatings showed only cubic phases with (111) and (222) preferred orientations. The highest crystallinity was shown by the SS/TiN coating, as indicated also by the largest grain size of 23.8 nm, which progressively decreased to 16.3 nm for the SS/TiNO monolayer. The oxynitride layers exhibited the best in vitro corrosion resistance either as a monolayer or as a top layer in the bilayer structure, making them a good candidate for implant applications.

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“…[53], we deal here with much shorter wires, which can make the assumption of a horizontal liquid surface not valid anymore. Since water does not wet either TiN or GaN substrate surfaces [57,59], it is reasonable to assume that water has already assembled in droplets when the liquid surface comes in contact with the NW tip [see Fig. 6(b)].…”

Section: Mechanical Instability Of Ultrathin Nwsmentioning

confidence: 99%

A route for the top-down fabrication of ordered ultrathin GaN nanowires

Oliva¹,

Kaganer²,

Pudelski³

et al. 2022

Preprint

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Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios exceeding 10 and diameters below 20 nm. Highly uniform thin GaN NWs are first obtained by using electron beam lithography to pattern a Ni/SiN x hard mask, followed by dry etching and wet etching in hot KOH. The SiN x is found to work as an etch stop during wet etching in hot KOH. Arrays with NW diameters down to (33 ± 5) nm can be achieved with a yield exceeding 99.9 %. Further reduction of the NW diameter down to 5 nm is obtained by applying digital etching which consists in plasma oxidation followed by wet etching in hot KOH. The NW radial etching depth is tuned by varying the RF power during plasma oxidation. NW breaking or bundling is observed for diameters below ≈ 20 nm, an effect that is associated to capillary forces acting on the NWs during sample drying in air. This effect can be principally mitigated using critical point dryers. Interestingly, this mechanical instability of the NWs is found to occur at much smaller aspect ratios than what is predicted for models dealing with macroscopic elastic rods. Explicit calculations of buckling states show an improved agreement when considering an inclined water surface, as can be expected if water assembles into droplets. The proposed fabrication route can be principally applied to any GaN/SiN x nanostructures and allows regrowth after removal of the SiN x mask.

show abstract

Wetting properties of titanium oxides, oxynitrides and nitrides obtained by DC and pulsed magnetron sputtering and cathodic arc evaporation

Cited by 29 publications

References 31 publications

A route for the top-down fabrication of ordered ultrathin GaN nanowires

A route for the top-down fabrication of ordered ultrathin GaN nanowires

In Vitro Corrosion of Titanium Nitride and Oxynitride-Based Biocompatible Coatings Deposited on Stainless Steel

A route for the top-down fabrication of ordered ultrathin GaN nanowires

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