Heteroatom
doping can effectively tailor the local structures and
electronic states of intrinsic two-dimensional materials, and endow
them with modified optical, electrical, and mechanical properties.
Recent studies have shown the feasibility of preparing doped graphene
from graphene oxide and its derivatives via some post-treatments,
including solid-state and solvothermal methods, but they require reactive
and harsh reagents. However, direct synthesis of various heteroatom-doped
graphene in larger quantities and high purity through bottom-up methods
remains challenging. Here, we report catalyst-free and solvent-free
direct synthesis of graphene doped with various heteroatoms in bulk
via flash Joule heating (FJH). Seven types of heteroatom-doped flash
graphene (FG) are synthesized through millisecond flashing, including
single-element-doped FG (boron, nitrogen, oxygen, phosphorus, sulfur),
two-element-co-doped FG (boron and nitrogen), as
well as three-element-co-doped FG (boron, nitrogen,
and sulfur). A variety of low-cost dopants, such as elements, oxides,
and organic compounds are used. The graphene quality of heteroatom-doped
FG is high, and similar to intrinsic FG, the material exhibits turbostraticity,
increased interlayer spacing, and superior dispersibility. Electrochemical
oxygen reduction reaction of different heteroatom-doped FG is tested,
and sulfur-doped FG shows the best performance. Lithium metal battery
tests demonstrate that nitrogen-doped FG exhibits a smaller nucleation
overpotential compared to Cu or undoped FG. The electrical energy
cost for the synthesis of heteroatom-doped FG synthesis is only 1.2
to 10.7 kJ g–1, which could render the FJH method
suitable for low-cost mass production of heteroatom-doped graphene.