What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?

Vandamme, L.K.J.; Hooge, F.N.

doi:10.1109/ted.2008.2005167

Cited by 223 publications

(157 citation statements)

References 91 publications

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“…Thus, upholders of mobility fluctuations on the basis of Eq. (1) confirm that the 1/f noise observed in good homogeneous semiconductor samples is due to mobility fluctuations caused by lattice scattering [15,[20][21][22][23][24]. The main argument against the mobility low-frequency fluctuations of free charge carriers is that there is no reliable explanation of the noise spectrum.…”

Section: Introductionmentioning

confidence: 69%

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The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

Palenskis¹

2017

Lith. J. Phys.

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The possibility of determination of the number of localized capture centers of defects (relaxators) that cause low-frequency noise in a particular frequency range has been investigated. Here it is shown that a minimum number of relaxators is needed to generate 1/f type low-frequency noise only when relaxation times are arbitrarily distributed one-by-one in every two-octave range. The expression for estimation of the low-frequency noise level of the sample under test is presented. The presented expression for 1/f noise explains not only the noise level dependence both on the frequency and number of defects in the sample but also the observed noise intensity dependence on the mobility of free charge carriers. It is shown that the main source that causes low-frequency noise in homogeneous semiconductors is the charge carrier capture-emission process.

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Section: Introductionmentioning

confidence: 69%

“…2 〉 = 1/4 [20]. When in every two-octave range there are K arbitrarily distributed independent relaxators, then g(τ) = 0.16K/f with very small deviations from the 1/f law (Fig.…”

Section: 〈(δN)mentioning

confidence: 96%

The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

Palenskis¹

2017

Lith. J. Phys.

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“…The empirical law stated that the normalized current noise is inversely proportional to the number of charge carriers in sample. Thus the 1/f noise may originate from noise in lattice scattering which in term causes random mobility MOSFET and poly-Si TFT reported in other literatures 16 .…”

Section: Analysis Of Low Frequency Noise Characteristics In P-type Pomentioning

confidence: 92%

Analysis of low frequency noise characteristics inp-type polycrystalline silicon thin film transistors

Liu

Fang

2017

Mod. Phys. Lett. B

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Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f γ (with γ near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge's parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be 7.17×10 20 cm −3 eV −1 . By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while N DD is about 1.5 × 10 20 cm −3 eV −1 , T DD is ∼ 617 K, N TD is ∼ 3.6 × 10 21 cm −3 eV −1 and T TD is ∼ 265 K.

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“…However, when discrete charging and discharging occurs stochastically through discrete states in a molecule, it causes random telegraph signal (RTS) noise. [26][27][28] The RTS noise has a Lorentzian spectrum with 1/f 2 dependence, which is superimposed onto 1/f noise.…”

Section: Concept and Setupmentioning

confidence: 99%

Detection of Molecular Charge Dynamics through Current Noise in A GaAs-based Nanowire FET

Inoue¹,

Kuroda²,

Sato³

et al. 2014

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials

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Detection of static and dynamic molecular charge state using a GaAs-based nanowire field-effect transistor (FET) was investigated. Tetraphenylporphyrin (TPP) was put on the device as target molecules. After coating TPP on the FET, the drain current obviously decreased. On the other hand, the current largely increased by 405-nm light irradiation, indicating that TPP worked as photo-excited donor. The light irradiation on the FET also induced Lorentzian noise component, which was superimposed onto conventional 1/f noise.These behaviors were not seen in the gateless nanowire even with TPP. Obtained results indicated that electrical interaction between TPP and the nanowire was enhanced when a metal gate existed, although the channel was protected from TPP by the gate metal. We discuss the observed behaviors on the basis of a model where only TPP in the gate periphery modulated the channel potential and the drain current.2

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What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?

Cited by 223 publications

References 91 publications

The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

The charge carrier capture–emission process – the main source of the low-frequency noise in homogeneous semiconductors

Analysis of low frequency noise characteristics inp-type polycrystalline silicon thin film transistors

Detection of Molecular Charge Dynamics through Current Noise in A GaAs-based Nanowire FET

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