2016
DOI: 10.1140/epjc/s10052-016-4531-9
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Where are $$\chi _{cJ}(3P)$$ χ c J ( 3 P ) ?

Abstract: In the present work, we propose Y (4140) as the χ c1 (3P) state by studying the χ c1 π + π − invariant mass spectrum of the B → K χ c1 π + π − process. In the DD invariant mass spectrum of the B → K DD process, we find a new resonance with the mass and width to be (4083.0 ± 5.0) and (24.1 ± 15.4) MeV, respectively, which could be a good candidate of the χ c0 (3P) state. The theoretical investigations on the decay behaviors of the χ cJ (3P) in the present work support the assignments of the Y (4140) and Y (4080… Show more

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Cited by 46 publications
(59 citation statements)
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“…The geometry of the boron atom can be best described as distorted tetrahedral. The B-S bond lengths [1.908 and 1.907(18) Å] are very close to those reported for the known boron polysulfides (2) Å], [10] but they are significantly longer than those in the three-coordinate boron compounds containing a B-SR bond (1.770-1.805 Å). [11] Figure 2.…”
Section: Scheme 2 Synthesis Of the Iminoboranesupporting
confidence: 66%
See 1 more Smart Citation
“…The geometry of the boron atom can be best described as distorted tetrahedral. The B-S bond lengths [1.908 and 1.907(18) Å] are very close to those reported for the known boron polysulfides (2) Å], [10] but they are significantly longer than those in the three-coordinate boron compounds containing a B-SR bond (1.770-1.805 Å). [11] Figure 2.…”
Section: Scheme 2 Synthesis Of the Iminoboranesupporting
confidence: 66%
“…More recently, the first boron persulfide was synthesized by the activation of elemental sulfur with 1. [10] These results prompted us to continually investigate its reactivity and to generate the proposed intermediate. Herein, we report the reactivity of 1 towards diazomethane R 2 C=N 2 , Ph 3 SnCl, 3,5-ditert-butyl-o-quinone, PhSSPh, and PhN=NPh, demonstrating its borylene-like reactivity.…”
mentioning
confidence: 99%
“…Recently, the LHCb collaboration [137] reported the 1 ++ quantum numbers for this resonance, which leads to a 3 3 P 1 state interpretation, i.e. χ c1 (3P ), within the cc context [138]. The mass value of the 3 3 P 1 state in the relativistic potential [96] and screened potential [64] models is above of the mass of the X(4140) [Y (4140)] resonance, but, for the case of the latter the difference is just 40 MeV, so this interpretation is possible.…”
Section: E X(4140)mentioning
confidence: 97%
“…Apart from the growth challenge, there lies an additional importance towards the optimization parameters in device processing. The device fabrication processes can influence the material properties as well as the final device performance, as in the case of dielectric passivation [16], plasma and chemical treatments [17,18], and thermal annealing [19]. In the performance of electronic and optoelectronic devices, high electrical contact and high series resistances reduces the device response speeds.…”
Section: Introductionmentioning
confidence: 99%
“…Dry etching is the basic tool used for mesa definition through material removal, and the use of a plasma based treatment induces degradation of the active layer. Thermal processing is known to play a critical role at many stages in device fabrication such as the alloying of ohmic contacts [19], activation of dopant species [20] and implantation induced damage removal [21]. According to literature, InN has not received much attention in terms of processing effects.…”
Section: Introductionmentioning
confidence: 99%