Where do hot electrons come from? (MOSFETs)

Frey, J.

doi:10.1109/101.101754

Cited by 6 publications

(2 citation statements)

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“…[7]. Carrier heating occurs in the PWB diode due to energy exchanges that occur between the electrons and lattice due to phonons especially, when the electric field is so high enough to exceed velocity saturation [26,27] . At low bias, the rate of energy exchange equals zero and carriers are in thermal equilibrium with the lattice.…”

Section: Comparison Of Diode I-v Characteristics Using Experimental R...mentioning

confidence: 99%

Hot electron effects on the operation of potential well barrier diodes

Akura

Dunn

Missous³

2019

J. Semicond.

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A study has just been carried out on hot electron effects in GaAs/Al0.3Ga0.7As potential well barrier (PWB) diodes using both Monte Carlo (MC) and drift-diffusion (DD) models of charge transport. We show the operation and behaviour of the diode in terms of electric field, mean electron velocity and potential, mean energy of electrons and Γ-valley population. The MC model predicts lower currents flowing through the diode due to back scattering at anode (collector) and carrier heating at higher bias. At a bias of 1.0 V, the current density obtained from experimental result, MC and DD simulation models are 1.35, 1.12 and 1.77 μA/μm2 respectively. The reduction in current over conventional model, is compensated to a certain extent because less charge settles in the potential well and so the barrier is slightly reduced. The DD model results in higher currents under the same bias and conditions. However, at very low bias specifically, up to 0.3 V without any carrier heating effects, the DD and MC models look pretty similar as experimental results. The significant differences observed in the I–V characteristics of the DD and MC models at higher biases confirm the importance of energy transport when considering these devices.

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Section: Comparison Of Diode I-v Characteristics Using Experimental R...mentioning

confidence: 99%

Hot electron effects on the operation of potential well barrier diodes

Akura

Dunn

Missous³

2019

J. Semicond.

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show abstract

“…However, if the gate voltage is comparable or lower than V DS , then the inversion layer is much stronger on the source side than on the drain side, thus causing the voltage drop due to the channel current to be concentrated near the drain side [87]. Electrons traveling from the source to the drain can then gain a significant amount of energy and become "hot" as their kinetic energy, written as k*T c (k is the Boltzmann's constant and T e is the electron temperature), will gain a T e of about 1000 to even 10 000 K, which is much higher than the lattice temperature [92]. The majority of the hot-electrons simply continue towards the drain, but a small number of them will gain enough energy to generate extra electrons and holes by impact ionization.…”

Section: Hot-carrier Reliability For Modern Nmos Technologiesmentioning

confidence: 99%