White electroluminescent nanostructures in silicon fabricated using focused ion implantation

Röcken, H.; Meijer, Jan; Stephan, A.; Weidenmüller, U.; Bukow, H.H.; Rolfs, C.

doi:10.1016/s0168-583x(01)00348-2

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…As was discussed in section 3.1, the interference effect in SOI samples cannot be ignored, rendering a straightforward calculation of η int , the key measure of intrinsic device efficiency, impossible. We note that η ext of the current SOI-LED compares favorably with other reports of a Si LEDs, monolithically integrated on commercial SOI [18,19]. However, the external efficiency of the LEDs reported here suggests further improvement in device design is required before integration with SOI waveguides provides edge emission compatible with applications in traditional optical communications.…”

Section: Electroluminescencesupporting

confidence: 69%

“…Further to the works on integrated emitters outlined in section 1.1 above, the current research literature contains relatively few reports of LEDs integrated on SOI substrates [17][18][19][20][21]. Photoluminescence on SOI is also explored in the search for an integrated Si light emitter [22][23][24], as well as for material characterization for the microelectronics industry [25].…”

Section: Optical Emission From Silicon-on-insulator Structuresmentioning

confidence: 99%

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Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures

Milgram¹,

Knights²,

Homewood³

et al. 2007

Semicond. Sci. Technol.

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Silicon-based, light emitting diodes (LEDs) and light emitting structures without electrical contacts have been integrated on silicon-on-insulator (SOI) wafers. The room temperature characterization of these samples using electro-and photo-luminescence is described. All samples emit at 1150 nm near the band-edge of Si, and samples that receive Er implantation emit additionally at a band centered at 1550 nm. Photoluminescence from the SOI wafers shows a strong influence from the optical cavity created by the Si/SiO 2 structure. This effect is corrected using a classical plane-wave model. The importance of this procedure is highlighted for the rigorous interpretation of the luminescent spectrum from any SOI system. The external quantum efficiency of the LEDs is measured to be 8.7 × 10 −6 . The potential impact on this efficiency resulting from the structure of diodes fabricated on SOI rather than bulk silicon is discussed.

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Section: Electroluminescencesupporting

confidence: 69%