White luminescence emission from silicon implanted germanium

Hernandez, A.G.; Escobosa, A.; Kudriavtsev, Yuriy

doi:10.1016/j.apsusc.2017.09.234

Cited by 22 publications

(7 citation statements)

References 46 publications

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“…The amorphous Ge0.25Si0.75 film was obtained by using three instead of one quadrants of Si pieces for the sputter-target (see Figure 2a,b). The dashed vertical lines show the wave number position of Raman bands for amorphous germanium and amorphous silicon as found in literature [61][62][63]. Ge-Si local bonds produces Raman lines between the pure substances [61][62][63].…”

Section: Sample Characterizationmentioning

confidence: 83%

In-situ Neutron Reflectometry to Determine Ge Self-Diffusivities and Activation Energy of Diffusion in Amorphous Ge_0.8Si_0.2

Hüger,

Stahn,

Schmidt

2023

EPJ Web Conf.

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Amorphous Ge-Si solid solutions are an interesting class of materials from the fundamental as well as the technological point of view. Self-diffusion of the constituents is an important process because of the inherent metastability. While self-diffusion was already examined in crystalline GexSi1-x (0 < x <1) this is not the case for the amorphous counterparts. This work reports on Ge self-diffusivities obtained from insitu neutron reflectometry measurements during isothermal annealing of ion-beam sputter-deposited amorphous Ge0.8Si0.2 films. The diffusivities are modified peculiarly fast with annealing time by a maximum factor of two due to structural relaxation. The diffusivities in the relaxed state are lower (higher) than in amorphous germanium (silicon). They follow the Arrhenius law and show an activation energy of (2.06 ± 0.1) eV, which equals that of amorphous germanium, but differs from that of amorphous silicon. Thus, it is concluded that the diffusion mechanism of Ge in amorphous Ge0.8Si0.2 and Ge are similar, despite of the presence of dispersed 20 at.% of Si.

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Section: Sample Characterizationmentioning

confidence: 83%

In-situ Neutron Reflectometry to Determine Ge Self-Diffusivities and Activation Energy of Diffusion in Amorphous Ge_0.8Si_0.2

Hüger,

Stahn,

Schmidt

2023

EPJ Web Conf.

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“…Copper was revealed to be in the mixed oxidation state form of Cu 4 O 3 by the two signals with binding energies at 934.0 and 933.0 eV . The char contains a mixture of germanium metal (29.5 eV, Ge 3/2 ) and germanium(II) oxide (32.0 eV) . The majority of the phosphorus is in the form of phosphate (134.08 eV, 97.7 %), with a small amount of P III (131.8 eV, 2.3 %), which is likely incorporated covalently in the carbon black …”

Section: Resultsmentioning

confidence: 99%

Orthogonally Bimetallized Phosphane‐ene Photopolymer Networks

Béland

Ragogna

2020

Chemistry A European J

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The development of batteries and fuel cells has brought to light an eed for carbon anode materials doped homogeneously with electrocatalytic metals.I np articular, combinations of electrocatalysts in carbon have shown promising activity.Am ethod to derive functional carbon materials is the pyrolysis of metallopolymers. This work describes the synthesis of ab ifunctional phosphonium-based system derived from ap hosphane-ene network. The olefin functionality can be leveraged in ah ydrogermylation reaction to functionalize the materialw ithG e. Unaffected by this radicala ddition, the bromide counterion of the phosphonium cation can be used to subsequently incorporate a second metal in an ion-complexation reactionw ithC uBr 2. The characterization of the polymers and the derived ceramics are discussed.

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“…As one kind of traditional self-aligned silicide process, ion implantation is also an artificial means to effectively construct radiative recombination centers (optical defects and impurity centers) in Si crystal [14][15][16][17][18]. A variety of ions [15,16], such as P, H, He, B, Cu and Fe, and even rare-earth elements, such as Tb and Er ions [17,18], were implanted into the silicon crystal to modulate the optical properties of silicon and thereby improve its optical efficiency.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of D and S defects induced by Si⁺/Ni⁺ ions co-implanting into Si films on insulator

Wang¹,

Chen²,

Huang³

et al. 2020

Nanotechnology

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In the article, we report the photoluminescence (PL) properties of D and S defects induced by Si + /Ni + ions co-implanting into the top Si film of the silicon-on-insulator (SOI) wafer. Variabletemperature PL spectra of these co-implanted SOI samples indicate that the light emitting from the D defects can be observed as high as 273 K. In comparison with the other ion-implantation, the Si + /Ni + ion-co-implantation optimizes luminescent temperature stability of the both D and S defects and purifies the S defect type in silicon then effectively restrains the spectral broadening of the S-line in PL spectra. The depth distribution of the D and S defects along the normal direction of SOI surface at the corresponding ion-implantation energy has been well depicted by detecting the PL signals of the layer-by-layer etched SOI surface, respectively. These results provide valuable information to fabricate SOI-based infrared light sources for optical fiber communications.

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White luminescence emission from silicon implanted germanium

Cited by 22 publications

References 46 publications

In-situ Neutron Reflectometry to Determine Ge Self-Diffusivities and Activation Energy of Diffusion in Amorphous Ge_0.8Si_0.2

In-situ Neutron Reflectometry to Determine Ge Self-Diffusivities and Activation Energy of Diffusion in Amorphous Ge_0.8Si_0.2

Orthogonally Bimetallized Phosphane‐ene Photopolymer Networks

Optical properties of D and S defects induced by Si⁺/Ni⁺ ions co-implanting into Si films on insulator

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White luminescence emission from silicon implanted germanium

Cited by 22 publications

References 46 publications

In-situ Neutron Reflectometry to Determine Ge Self-Diffusivities and Activation Energy of Diffusion in Amorphous Ge0.8Si0.2

In-situ Neutron Reflectometry to Determine Ge Self-Diffusivities and Activation Energy of Diffusion in Amorphous Ge0.8Si0.2

Orthogonally Bimetallized Phosphane‐ene Photopolymer Networks

Optical properties of D and S defects induced by Si+/Ni+ ions co-implanting into Si films on insulator

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Product

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In-situ Neutron Reflectometry to Determine Ge Self-Diffusivities and Activation Energy of Diffusion in Amorphous Ge_0.8Si_0.2

In-situ Neutron Reflectometry to Determine Ge Self-Diffusivities and Activation Energy of Diffusion in Amorphous Ge_0.8Si_0.2

Optical properties of D and S defects induced by Si⁺/Ni⁺ ions co-implanting into Si films on insulator