White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling

IEEE J. Electron Devices Soc.

2021

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will be a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.

Section: Introductionmentioning

confidence: 99%

Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

Ohmori¹,

IEEE J. Electron Devices Soc.

2021

“…= 180 nm will be presented in this paper. The system configuration is similar to that in [3,4], except that an external auxiliary amplifier is used for reducing the power consumption of the main board.…”

Section: Noise Measurement System Developmentmentioning

confidence: 99%

Variable-Temperature Broadband Noise Characterization of MOSFETs for Cryogenic Electronics: From Room Temperature down to 3 K

Ohmori¹,

2022

Preprint

<p>A broadband noise measurement system is newly developed and demonstrated at temperatures between 3 K and 300 K. Using the system, wideband noise spectroscopy (WBNS) from 20 kHz to 500 MHz is carried out for the first time, revealing that shot noise is the dominant white noise down to 3 K. The paper also suggests, by means of WBNS, the possibility of extracting the baseline noise characteristics, which do not include the noise component that varies a great deal from device to device. </p>

“…At present, an improved version of the noise probe is commercially available [27], details of which were presented in [18]. In this study, we apply the same principle to the development of an in-situ system for variable-temperature broadband noise measurements down to 120 K [28].…”

Section: Introductionmentioning

confidence: 99%

Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

Ohmori¹,

2021

Preprint

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.<div><br></div>