White spots reduction by ultimate proximity metal gettering at carbon complexes formed underneath contact area in CMOS image sensors

Yamaguchi, Tadashi; Yamashita, T.; Kamino, Takeshi; Kuroi, T.; Matsuura, M.

doi:10.1109/vlsit.2016.7573447

Cited by 10 publications

(7 citation statements)

References 5 publications

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“…First, Yamaguchi et al reported that hydrocarbon–molecular–implanted silicon wafer can achieve a decrease of metallic impurities related dark current and that of interface state defect related dark current in deep trench isolation (DTI) or Si/SiO 2 interface region using CMOS image sensor fabrication [62,63,64] (Yamaguchi et al called this wafer “carbon complexes”). Their experimental results indicate that the interface state defect passivated by hydrocarbon (mainly hydrogen).…”

Section: Gettering Technology Design For Back-side-illuminated Cmomentioning

confidence: 99%

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kurita

Kadono

Shigematsu

et al. 2019

Sensors

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We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

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Section: Gettering Technology Design For Back-side-illuminated Cmomentioning

confidence: 99%

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Kurita

Kadono

Shigematsu

et al. 2019

Sensors

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“…Because of the stringent contamination levels for CIS applications, much attention has been given to the implementation of appropriate gettering techniques. Good results have been obtained by implementing a proximity carbon-implantation which getters Fe, Ni and also slow diffusing metals such as W. [25] Besides optimizing the C implantation conditions, attention must also be given to the appropriate rapid thermal annealing (RTA) step, the post-treatments, and the design layout of the C-implantation mask, i.e., in the middle of the contact area, only on one side, or at both sides of the contact area. Some results are given as an illustration in Figure 10, clearly indicating the strong reduction of the white spots.…”

Section: Cmos Image Sensorsmentioning

confidence: 99%

Device Performance as a Metrology Tool to Detect Metals in Silicon

Claeys

Simoen

2019

Physica Status Solidi (a)

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Herein, the impact of transition metals (TMs) on the electrical device performance, i.e., carrier lifetime, leakage current, low‐frequency noise, photocurrent, and solar cell efficiency is reviewed. Defect information is obtained by using either simple device structures such as metal‐oxide‐semiconductor (MOS) capacitors and pn‐diodes or transistors. The impact of metals on complementary MOS (CMOS) image sensors (CIS) and solar cells is also briefly addressed. Scaled devices are a power tool to detect small‐sized defect clusters or even single metal atoms. Examples are given for a variety of both slow‐ and fast‐diffusing metals. The final section outlines the power of density functional theory (DFT) ab initio calculations to support the experimental observations and to get a deeper physical insight into the defect structure.

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“…These deep energy levels can act as generationrecombination centers that mostly affect electrical device parameters such as dark current and white-spot defect density. 10,11) Thus, they degrade the yield and reliability of CMOS image sensors.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

Koga¹,

Kadono²,

Shigematsu³

et al. 2018

Jpn. J. Appl. Phys.

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We propose a fabrication process for silicon wafers by combining carbon-cluster ion implantation and room-temperature bonding for advanced CMOS image sensors. These carbon-cluster ions are made of carbon and hydrogen, which can passivate process-induced defects. We demonstrated that this combination process can be used to form an epitaxial layer on a carbon-cluster ion-implanted Czochralski (CZ)-grown silicon substrate with a high dose of 1 ' 10 16 atoms/cm 2 . This implantation condition transforms the top-surface region of the CZ-grown silicon substrate into a thin amorphous layer. Thus, an epitaxial layer cannot be grown on this implanted CZ-grown silicon substrate. However, this combination process can be used to form an epitaxial layer on the amorphous layer of this implanted CZ-grown silicon substrate surface. This bonding wafer has strong gettering capability in both the wafer-bonding region and the carbon-cluster ion-implanted projection range. Furthermore, this wafer inhibits oxygen out-diffusion to the epitaxial layer from the CZ-grown silicon substrate after device fabrication. Therefore, we believe that this bonding wafer is effective in decreasing the dark current and white-spot defect density for advanced CMOS image sensors.

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White spots reduction by ultimate proximity metal gettering at carbon complexes formed underneath contact area in CMOS image sensors

Cited by 10 publications

References 5 publications

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Device Performance as a Metrology Tool to Detect Metals in Silicon

Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

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