Who Wins the Nonvolatile Memory Race?

Meijer, G. I.

doi:10.1126/science.1153909

Cited by 518 publications

(333 citation statements)

References 8 publications

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“…Besides logic FET, memory devices are the other vital component of integrated nanoelectronics. A resistive switching (RS) device has electronic conduction that can be switched between nonvolatile ''ON'' (lowresistance) and ''OFF'' (high-resistance) states in the CPP configuration [30][31][32][33][34]. In fact, these RS systems represent a particular class of dynamic circuit element known as the ''memristor'' [35,36].…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Luo

Turner

et al. 2013

Phys. Rev. X

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Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt=LaAlO 3 =SrTiO 3 heterostructures, where the conducting layer near the LaAlO 3 =SrTiO 3 interface serves as the ''unconventional'' bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO 3 =SrTiO 3 interface and the creation of defect-induced gap states within the ultrathin LaAlO 3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

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Section: Introductionmentioning

confidence: 99%

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Luo

Turner

et al. 2013

Phys. Rev. X

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“…Thus, there is a desire to develop stable nonvolatile RAM, which can simultaneously achieve fast and large storage capacities. 1 The resistancechange memory concept has attracted great interest for this purpose, which relies on the change in current flow through low-and high-resistivity regions of a material to store information ͑bits͒. 2 In this context, ternary ͑GeTe͒ m ͑Sb 2 Te 3 ͒ n materials, in particular, the Ge 2 Sb 2 Te 5 ͑GST͒ composition, have been considered as the most natural candidates for nonvolatile memory applications through exploiting the fast and reversible phase change between a crystalline phase ͑low resistivity͒ and an amorphous phase ͑high resistivity͒.…”

Section: Introductionmentioning

confidence: 99%

Atomistic origins of the phase transition mechanism in Ge2Sb2Te5

Silva

Walsh

Wei

et al. 2009

Journal of Applied Physics

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Tricritical behavior of the RI-RV rotator phase transition in a mixture of alkanes with nanoparticles J. Chem. Phys. 135, 134505 (2011) Pressure-induced amorphization in mayenite (12CaO·7Al2O3) J. Chem. Phys. 135, 094506 (2011) Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx Appl. Phys. Lett. 99, 072103 (2011) Temperature induced transition from hexagonal to circular pits in graphite oxidation by O2 Appl. Phys. Lett. 99, 044102 (2011) Phase transformation of Ho2O3 at high pressure J. Appl. Phys. 110, 013526 (2011) Additional information on J. Appl. Phys. The fast and reversible phase transition mechanism between crystalline and amorphous phases of Ge 2 Sb 2 Te 5 has been in debate for several years. Through employing first-principles density functional theory calculations, we identify a direct structural link between the metastable crystalline and amorphous phases. The phase transition is driven by the displacement of Ge atoms along the rocksalt ͓111͔ direction from stable octahedron to high energy unstable tetrahedron sites close to the intrinsic vacancy regions, which generates a high energy intermediate phase between metastable and amorphous phases. Due to the instability of Ge at the tetrahedron sites, the Ge atoms naturally shift away from those sites, giving rise to the formation of local-ordered fourfold motifs and the long-range structural disorder. Intrinsic vacancies, which originate from Sb 2 Te 3 , lower the energy barrier for Ge displacements, and hence, their distribution plays an important role in the phase transition. The high energy intermediate configuration can be obtained experimentally by applying an intense laser beam, which overcomes the thermodynamic barrier from the octahedron to tetrahedron sites. The high figure of merit of Ge 2 Sb 2 Te 5 is achieved from the optimal combination of intrinsic vacancies provided by Sb 2 Te 3 and the instability of the tetrahedron sites provided by GeTe.

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“…[4] The switching mechanism involved changes to the Schottky-like barrier at a Pt/TiO 2 interface caused by the drift of positively charged oxygen vacancies (V O s) under an applied electric field. These nanoscale switches may enable a new type of nonvolatile random access memory (RAM) [15][16][17][18][19][20] and analog switching for neuromorphic computing. [21] Here, we show that the previously reported nanoswitches are actually just one member in a family of memristively switched reconfigurable devices that behave as a network of parallel and series memristors and rectifiers.…”

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confidence: 99%

A Family of Electronically Reconfigurable Nanodevices

et al. 2009

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AFM image of 17 nanodevices with a zoom‐in cartoon schematically shows an individual crosspoint device consisting of two Pt metal electrodes separated by a TiO2 bi‐layer memristive material. By applying an electric field across the memristive material, oxygen vacancies can drift up and down, leading to four current‐transport end‐states. The switching between these end‐states results in a family of nanodevices.

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Who Wins the Nonvolatile Memory Race?

Cited by 518 publications

References 8 publications

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Atomistic origins of the phase transition mechanism in Ge2Sb2Te5

A Family of Electronically Reconfigurable Nanodevices

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