Why do (2×4) GaAs and InAs (001) surfaces exposed to phosphorus have so different behavior? Elastic strain arguments

Abstract

Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study J.

As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system

“…This is a GaAs surface property, which does not depend on the machine [9]. 5 presents PL intensity measurements.…”

A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth

“…The long interruptions are thus prevented when going from the III-As layer to III-P (or vice versa) when the static surface of the arsenide layer is subjected to the P 2 molecular flux (or the phosphide layer surface to the As 2 molecular flux). These exposures may result in a composition change in the group V sublattice of near-surface layers, as well as in the degradation of surface morphology [13] and, consequently, in the overall deterioration of hetero-interface abruptness. Using our source, we have grown some III-As/III-P heterostructures for device applications and physical research.…”