Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films

Ide, Keisuke; Kikuchi, Mitsuho; Sasase, Masato; Hiramatsu, Hidenori; Kumomi, Hideya; Hosono, Hideo; Kamiya, Toshio

doi:10.1109/am-fpd.2016.7543696

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…The structure has features of a layered structure with Ga-O bonds almost forming a plane on which is built a layer of tetrahedral Zn sites with oxygens, followed by the octahedrally coordinated In sites. The density of a-IGZO is taken as 6.04 g/cm 3 compared to 6.36-6.4 g/cm 3 for the crystalline phase, from experiment [61,62,23]. In this network, most Zn atoms have 4-fold coordination and most In and Ga are 5-fold or 6-fold coordinated as in other works [59,60,23].…”

Section: Bulk Znomentioning

confidence: 99%

Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO

Guo

Robertson

2018

Phys. Rev. Materials

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Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. The behavior of hydrogen and oxygen vacancies in amorphous In-Ga-Zn-O is studied using density functional supercell calculations. We show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge, infra-red modes at about 1400 and 1520 cm-1 , and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors like In-Ga-Zn-O (IGZO).

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Section: Bulk Znomentioning

confidence: 99%

Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO

Guo

Robertson

2018

Phys. Rev. Materials

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Impact of electrode materials on the performance of amorphous IGZO thin-film transistors

Tappertzhofen

2022

MRS Advances

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This study reports on the fabrication and characterization of thin-film transistors (TFTs) based on indium–gallium–zinc–oxide (IGZO) with various source- and drain-region metals (Pt, W and Ti). The performance of the IGZO transistors is compared to TFTs based on hydrogenated amorphous silicon (a-Si:H) with Pt source- and drain-regions. From the output characteristics maximum saturation mobilities of µ = 0.45 cm2/Vs for a-Si:H, and µ = 24 to 50 cm2/Vs for IGZO TFTs are extracted, which are competitive to high-performance thin-film transistors. The study reveals a general influence of the source- and drain-electrode material on the maximum saturation mobility and inverse sub-threshold slope. Graphical abstract

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Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films

Cited by 2 publications

References 7 publications

Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO

Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO

Impact of electrode materials on the performance of amorphous IGZO thin-film transistors

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