Wide-Bandgap II-VI Semiconductors: Growth and Properties

Isshiki, Minoru; Wang, Jifeng

doi:10.1007/978-3-319-48933-9_16

Cited by 25 publications

(10 citation statements)

References 112 publications

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“…II-VI semiconducting nanomaterials have attracted a lot of attention owing to their potential applications in light emitting diodes [1][2][3], solar cells [4] and optical devices [5]. Cadmium sulfide (CdS) is one of the most studied semiconductors with a direct band gap of 2.42 eV.…”

Section: Introductionmentioning

confidence: 99%

Comparative study on the effect of precursors on the morphology and electronic properties of CdS nanoparticles

et al. 2021

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Cadmium dithiocarbamate and cadmium ethyl xanthate complexes were synthesized and characterized by microanalysis, Fourier transform infrared (FT-IR) spectroscopy and thermogravimetric analyses. The complexes were employed as molecular precursors for the fabrication of CdS nanoparticles in hexadecylamine (HDA) and oleylamine (OLA) at a temperature of 250 °C. Spherical and oval shaped particles with sizes ranging from 9.93 ± 1.89 to 16.74 ± 2.78 nm were obtained in OLA while spherical, oval and rod shaped particles with sizes ranging from 9.40 ± 1.65 to 29.90 ± 5.32 nm were obtained in HDA. Optical properties of the nanoparticles showed blue shifts as compared to the bulk CdS, with the OLA capped nanoparticles slightly more blue shifted than the corresponding HDA capped nanoparticles. Results of crystallinity patterns revealed hexagonal phase of CdS.

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Section: Introductionmentioning

confidence: 99%

Comparative study on the effect of precursors on the morphology and electronic properties of CdS nanoparticles

et al. 2021

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“…Usually, impurities and native defects fundamentally affect electronic, optical, and magnetic properties of both single crystals and nanosized solid-state materials [21]. In some cases, native defects can demonstrate either a donor or an acceptor character and form complexes with dopant impurities.…”

Section: Introductionmentioning

confidence: 99%

Luminescence of Femtosecond Laser-Processed ZnSe Crystal

Dmitruk

Berezovska

Degoda

et al. 2021

Journal of Nanomaterials

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The ZnSe single crystal treatment in air environment with linearly polarized Ti/sapphire femtosecond (fs)laser pulses of the energy density of around 0.04-0.05 J/cm2 with central wavelength of 800 nm and the pulse duration of 140 fs at a repetition rate of 1 kHz generates the laser-induced periodic surface structures (LIPSSs). The setup with a cylindrical quartz lens at normal incidence allowed processing a relatively large area of the ZnSe sample in one pass of the laser beam. Morphology analysis of LIPSS by scanning electron microscopy (SEM) and image processing reveals the existence of two periods of around 200.0 nm and 630.0 nm simultaneously. All LIPSSs demonstrate the orientation perpendicular to the laser beam polarization. The possible nature of LIPSS formation on ZnSe single crystal is caused by the synergetic influence of the interference mechanism involving surface plasmon polaritons and hydrodynamic effects of surface morphology modification. The fs-laser-induced changes of carrier concentrations in ZnSe specify obtained periods of high spatial frequency LIPSS. The influence of femtosecond laser processing on luminescent properties of ZnSe single crystal has been studied by an analysis of the photoluminescence (PL) and X-ray luminescence (XRL) spectra of laser-treated and untreated areas in the visible region of spectrum at room and low temperatures. The PL spectra and XRL spectra, as well as temperature dependencies of XRL spectra or thermally stimulated luminescence curves, demonstrate a good correlation for untreated and fs-laser-treated ZnSe surfaces. Specific PL bands related to the extended structural defects do not appear for LIPSS at the ZnSe sample under an excitation of 337 nm (3.68 eV). The Relative intensities and position of separate components of observed luminescence bands after ultrashort laser treatment do not change significantly. Thus, the structural perfection of the ZnSe single crystal surface is preserved.

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“…The last few years have witnessed an incredibly great interest in wide band gap IIB-VIA semiconductor materials due to their high performance in optoelectronic devices such as light emitting diodes [1], laser diodes [2], photovoltaic cells [3], solar cells [4], infrared optics and biological imaging [5]. Among this family, ternary alloys such as CdSe x Te 1−x and ZnSe x Te 1−x owned unique physical and chemical properties which might not be available in their parent binary systems (CdTe, CdSe, ZnTe and ZnSe) [6].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Substituting Effect of Se on the Physical Properties and Performances of Cd〖Se〗_x 〖Te〗_(1-x)and Zn〖Se〗_x 〖Te〗_(1-x) Materials for Semiconductor Radiation Detectors

Malki¹,

Tebboune²,

Ghalouci³

et al. 2021

Rev. Mex. Fís.

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The structural and electronic properties of and semiconductor detectors at various concentrations x = 0, 0.25, 0.5, 0.75 and 1 of Selenium (Se) were determined by using the full potential-linearized augmented plane wave (FP-LAPW) based on the density functional theory (DFT). The compositional dependence of such properties was analysed and discussed. The concentration dependence of lattice parameter and bulk modulus show nonlinearity. All the investigated alloys have a direct bandgap (Γ-Γ) which decreasesnonlinearly with increase in Se concentration. On the other hand, Geant4 simulations have been performed for studying the absolute and full-energy peak detection efﬁciencies and energy resolution at 1.5”×1.5” of these alloys as semiconductor detectors in the 511-1332 keV gamma-ray energy range. Ours findings are in a good agreement with the available theoretical and experimental data. We hope that our results serve as are reference for future theoretical and experimental researches.

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Wide-Bandgap II-VI Semiconductors: Growth and Properties

Cited by 25 publications

References 112 publications

Comparative study on the effect of precursors on the morphology and electronic properties of CdS nanoparticles

Comparative study on the effect of precursors on the morphology and electronic properties of CdS nanoparticles

Luminescence of Femtosecond Laser-Processed ZnSe Crystal

Investigation of the Substituting Effect of Se on the Physical Properties and Performances of Cd〖Se〗_x 〖Te〗_(1-x)and Zn〖Se〗_x 〖Te〗_(1-x) Materials for Semiconductor Radiation Detectors

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