2019
DOI: 10.1002/aenm.201903085
|View full text |Cite
|
Sign up to set email alerts
|

Wide‐Bandgap Perovskite/Gallium Arsenide Tandem Solar Cells

Abstract: Gallium arsenide (GaAs) photovoltaic (PV) cells have been widely investigated due to their merits such as thin‐film feasibility, flexibility, and high efficiency. To further increase their performance, a wider bandgap PV structure such as indium gallium phosphide (InGaP) has been integrated in two‐terminal (2T) tandem configuration. However, it increases the overall fabrication cost, complicated tunnel‐junction diode connecting subcells are inevitable, and materials are limited by lattice matching. Here, high‐… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
41
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
8

Relationship

3
5

Authors

Journals

citations
Cited by 57 publications
(41 citation statements)
references
References 90 publications
0
41
0
Order By: Relevance
“…[ 146 ] As a partner of PSCs in double‐junction tandem solar cell (TSC) structures, perovskite having different bandgaps, silicon ( E g = ≈1.12 eV) and copper indium gallium selenide ( E g = ≈1.1 eV), have been widely investigated, and a tandem cell built on a compound semiconductor gallium arsenide (GaAs) was recently demonstrated by our research group. [ 147–149 ] In this section, we especially focus on the TSC devices, which are composed of NiO x ‐based PSCs, and the role of NiO x in those TSCs will be discussed.…”
Section: Applications Of Nio X Thin Film To Perovskite‐based Tandem Solar Cellsmentioning
confidence: 99%
“…[ 146 ] As a partner of PSCs in double‐junction tandem solar cell (TSC) structures, perovskite having different bandgaps, silicon ( E g = ≈1.12 eV) and copper indium gallium selenide ( E g = ≈1.1 eV), have been widely investigated, and a tandem cell built on a compound semiconductor gallium arsenide (GaAs) was recently demonstrated by our research group. [ 147–149 ] In this section, we especially focus on the TSC devices, which are composed of NiO x ‐based PSCs, and the role of NiO x in those TSCs will be discussed.…”
Section: Applications Of Nio X Thin Film To Perovskite‐based Tandem Solar Cellsmentioning
confidence: 99%
“…The wide-band gap perovskite tandem solar cell with multiterminal configuration using silicon and gallium arsenide has been developed for the practical use of photovoltaic devices. 4,5 The photovoltaic properties were influenced by chemical elements and the crystalline structure in the active layer. [6][7][8] The photovoltaic performance was based on optimization with tuning of the electronic structure, band gap, and the effective mass related to the carrier mobility.…”
Section: Introductionmentioning
confidence: 99%
“…To further improve the absorption of 4‐T perovskite/GaAs tandem solar cells, it is necessary to provide a suitable ARC for the devices. We introduce LiF [ 29,44 ] with excellent antireflection performance in the study and place it on top of the tandem solar cells as ARC. As shown in Figure a, the total PCE increases to some extent after the introduction of ARC.…”
Section: Resultsmentioning
confidence: 99%
“…For the comprehensive consideration of conductivity and photon absorption rate, the maximum total efficiency can be achieved by setting the thickness of ITO to 30 nm. Furthermore, independent GaAs bottom cell can use ARC (MgF 2 ) [ 29,44 ] and metal electrode instead of ITO to achieve lower absorption loss, resulting in an improvement in the light absorption of 650–770 nm, as shown in Figure 4f. By introducing appropriate ARC and optimizing the thickness of the front ITO electrode, the total PCE of the 4‐T perovskite/GaAs tandem solar cells increases from 28.90% to 29.91%.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation