Wide bandgap semiconductor opportunities in power electronics

Armstrong, Kristina; Das, Sujit; Cresko, Joe

doi:10.1109/wipda.2016.7799949

Cited by 31 publications

(15 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Low switching losses allow WBG semiconductors reaching efficiencies up to 99%. This means up to 75% energy losses reduction compared with Si devices [51]. Moreover, higher switching frequencies can be reached too.…”

Section: Reduced Energy Consumptionmentioning

confidence: 97%

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

et al. 2021

View full text Add to dashboard Cite

At present, the energy transition is leading to the replacement of large thermal power plants by distributed renewable generation and the introduction of different assets. Consequently, a massive deployment of power electronics is expected. A particular case will be the devices destined for urban environments and smart grids. Indeed, such applications have some features that make wide bandgap (WBG) materials particularly relevant. This paper analyzes the most important features expected by future smart applications from which the characteristics that their power semiconductors must perform can be deduced. Following, not only the characteristics and theoretical limits of wide bandgap materials already available on the market (SiC and GaN) have been analyzed, but also those currently being researched as promising future alternatives (Ga2O3, AlN, etc.). Finally, wide bandgap materials are compared under the needs determined by the smart applications, determining the best suited to them. We conclude that, although SiC and GaN are currently the only WBG materials available on the semiconductor portfolio, they may be displaced by others such as Ga2O3 in the near future.

show abstract

Section: Reduced Energy Consumptionmentioning

confidence: 97%

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

et al. 2021

View full text Add to dashboard Cite

show abstract

“…We have also studied the electrical and photoresponse properties of ( 1 ) as well as its salts ( 2 – 4 ) to examine whether salts of this compound can improve the above-mentioned properties. The observed experimental band gaps (2–3 eV) indicate that they are wide-band gap semiconductors (WBGS) , and thus should have electronic properties in between those of typical semiconductors and insulators, allowing these materials to be potential candidates for operating at elevated temperatures, currents, and frequencies than traditional semiconductors. − WBGS materials are the key components used to fabricate LEDs and lasers, in some specific radio frequency function, specifically in military radars. Their intrinsic characteristics induce the potentiality for a broad area of application, and they are considered as the foremost contestants for the next-generation devices. − Moreover, considering the biological importance of our synthesized organic compounds, we have also explored the interaction of CT-DNA with one of the salts ( 2 ) in aqueous buffer medium.…”

Section: Introductionmentioning

confidence: 99%

Structures, Photoresponse Properties, and Biological Activity of Dicyano-Substituted 4-Aryl-2-pyridone Derivatives

Mandal

Pathak²,

Dey

et al. 2019

ACS Omega

View full text Add to dashboard Cite

Described in this work is the synthesis of a novel dicyano-substituted N -2-aminoethyl-4-(3-pyridinyl)-2-pyridone organic compound ( 1 ) that is characterized by several spectroscopic methods. Compound ( 1 ) was utilized for the preparation of its perchlorate ( 2 ), chloride ( 3 ), and bromide ( 4 ) salts. Single-crystal X-ray structures of these three salts were determined, and noncovalent weak interactions involving the aromatic rings, anions, and water molecules in ( 2 – 4 ) were investigated in detail. Solid-state UV–vis spectrum of the reported compounds ( 1 – 4 ) was utilized to calculate their optical band gaps, which clearly indicated that they belong to the semiconductor family. Under illumination condition, the magnitudes of electrical properties of ( 1 ) and its salts ( 2 – 4 ) improve remarkably although the improvement differs from salt to salt and the result was analyzed theoretically. Salt ( 2 ) was tested for its DNA binding ability.

show abstract

“…One approach to overcome these limitations and to improve the performance of electronic converters is the use of transistors made of materials with wide bandgap (WBG), such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Several studies have demonstrated the possibility of applying SiC and GaN transistors in converters operating at high switching frequencies, high voltages, and high working temperature [11][12][13][14], including in the UPS sector for single-phase converters [15,16]. The characteristics of such materials allow the construction of equipment with smaller passive elements, smaller heat sinks, and at the same time improve the efficiency of the system [17].…”

Section: Introductionmentioning

confidence: 99%

Design of an Highly Efficient AC-DC-AC Three-Phase Converter Using SiC for UPS Applications

2018

View full text Add to dashboard Cite

With the constant increase of energy consumption in the world, the efficiency of systems and equipment is becoming more important. Uninterruptible Power Supply (UPS) is an equipment that provides safe and reliable supply for critical load systems, that is, systems where a supply interruption can lead to economical or even human losses. The Double Conversion UPS is the most complete UPS class in terms of load protection, regulation, performance, and reliability, however, it has lower efficiency and higher cost because of its high number of power converters. Silicon Carbide devices are emerging as an opportunity to construct power converters with higher efficiency and higher power density. The main purpose of this work is to design a three-phase AC-DC-AC converter using Silicon Carbide for Double Conversion UPS applications. The aim is to maximize efficiency and minimize volume and mass. The methodologies to size and choose the main hardware components are described in detail. Experimental results obtained with the prototype prove the high efficiency and high power density achievable with Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (MOSFETs).

show abstract

Wide bandgap semiconductor opportunities in power electronics

Cited by 31 publications

References 12 publications

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

Structures, Photoresponse Properties, and Biological Activity of Dicyano-Substituted 4-Aryl-2-pyridone Derivatives

Design of an Highly Efficient AC-DC-AC Three-Phase Converter Using SiC for UPS Applications

Contact Info

Product

Resources

About