Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments

Reed, Frederick K.; Callie, Goetz,; Ericson, M.N.; Sweeney, Dan; Ezell, N. Dianne Bull

doi:10.2172/1856704

Cited by 3 publications

(4 citation statements)

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“…These technologies will further harden the system against the effects 6. CONCLUSION of radiation damage [21]. Of the WBG semiconductors, SiC is the most mature and has been studied under irradiation since the early 1990s [14]; presently, NASA Glenn (Cleveland, OH) maintains a SiC JFET process used for Venus exploration [17][18][19].…”

Section: Expected Radiation Effectsmentioning

confidence: 99%

“…However, the silicon-based JFETs chosen are unverified under neutron irradiation and are not expected to exceed the state-of-the-art neutron fluence limit of 10 14 -10 15 n/cm 2 [3]. It is feasible to increase this limit by switching to a wide bandgap semiconductor material and increasing the dopant levels [3,21] or positioning the FREND system further from the radiation source to extend it's operational lifetime. However, while the neutron fluxes outside the reactor vessel where the FREND system is intended to be installed are several orders of magnitude lower than the flux in the core, the system must still survive non-trivial neutron fluxes in order to minimize cable length.…”

Section: Introductionmentioning

confidence: 99%

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Development of a Radiation-Tolerant Front End Digitizer

Sweeney¹,

Callie²,

Reed³

et al. 2022

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Section: Expected Radiation Effectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Development of a Radiation-Tolerant Front End Digitizer

Sweeney¹,

Callie²,

Reed³

et al. 2022

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“…Despite their susceptibility to permanent degradation and catastrophic failure due to heavy-ion exposure [ 2 ], numerous research publications have already pointed out that future semiconductor technologies, including those for space, detectors, medicine, and nuclear applications, consider the application of wide band gap (WBG) semiconductors such as GaN and SiC. In these crystals, the gap between the valence and conduction bands is an essential parameter that defines not only the electrical properties, but also the susceptibility to radiation [ 3 ]. The advantage of WBG compared with classical semiconductors such as silicon and gallium arsenide is in the improved electrical properties, such as a higher efficiency, switching frequency, operating temperature, and higher operating voltage [ 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

“…This leads to faster, dimension-wise, smaller, more powerful, and more efficient components. These capabilities will be reflected in smaller sizes and weights and will have less power demand due to limited power losses [ 3 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor

et al. 2023

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Proton irradiation experiments have been used as a surrogate for studying radiation effects in numerous materials for decades. The abundance and accessibility of proton accelerators make this approach convenient for conducting accelerated radiation ageing studies. However, developing new materials with improved radiation stability requires numerous model materials, test samples, and very effective utilization of the accelerator beam time. Therefore, the question of optimal beam current, or particle flux, is critical and needs to be adequately understood. In this work, we used 5 MeV protons to introduce displacement damage in gallium arsenide samples using a wide range of flux values. Positron annihilation lifetime spectroscopy was used to quantitatively assess the concentration of radiation-induced survived vacancies. The results show that proton fluxes in range between 1011 and 1012 cm−2.s−1 lead to a similar concentration of monovacancies generated in the GaAs semiconductor material, while a further increase in the flux leads to a sharp drop in this concentration.

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Atomic displacement threshold energies and defect generation in GaN, AlN, and AlGaN: A high-throughput molecular dynamics investigation

Hauck,

Jin,

Tuttle

2024

Applied Physics Letters

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Gallium nitride, aluminum nitride, and their ternary alloys form an important class of wide-bandgap semiconductors employed in a variety of applications, including radiation-hard electronics. To better understand the effects of irradiation in these materials, molecular dynamics simulations were employed to determine the threshold recoil energies to permanently displace atoms from crystalline sites. Threshold displacement energies were calculated with the lattices at 0 K. Thermal effects are found to lower the threshold energies by ∼1 eV. The threshold energy knockout events observed result in Frenkel pair defects. The electronic structure and dynamics of these Frenkel pair defects are analyzed and the consequences for device operation are discussed.

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Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments

Cited by 3 publications

References 0 publications

Development of a Radiation-Tolerant Front End Digitizer

Development of a Radiation-Tolerant Front End Digitizer

Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GaAs Semiconductor

Atomic displacement threshold energies and defect generation in GaN, AlN, and AlGaN: A high-throughput molecular dynamics investigation

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