Wide Bandwidth Current Sensor for Commutation Current Measurement in Fast Switching Power Electronics

Ziegler, Philipp; Troster, Nathan; Schmidt, Dimitri; Ruthardt, Johannes; Fischer, Manuel; Roth-Stielow, Jörg

doi:10.23919/epe20ecceeurope43536.2020.9215686

Cited by 18 publications

(6 citation statements)

References 10 publications

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“…More generally, since there is no way of measuring current directly, and indirect measurements result in non-ideal representation of the measured quantity, measurements obtained by current sensors inherently deviate from the actual measured current. To verify that this deviation is acceptable, comparative measurements are used between different current sensor technologies, as well as individuals of the same technology, for assessing the sensor accuracy [11,[40][41][42][43]. Comparative measurements are performed regardless of the measurement technique, as for example, pulsed current or transmission coefficient analysis with a VNA.…”

Section: Current Sensor Performance Evaluation Methodsmentioning

confidence: 99%

On performance evaluation of high‐power, high‐bandwidth current measurement technologies for SiC switching devices

Philipps,

Peftitsis

2024

IET Power Electronics

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Silicon carbide (SiC) power metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) switch at an unprecedented speed, even at high currents. For accurate dynamic characterization, current sensors must measure high currents at a high bandwidth. Moreover, at high switching speeds, parasitic impedances in the commutation loop become critical. To ensure high‐accuracy measurements, the current sensor insertion impedance must be minimal. Here, a two‐step current sensor evaluation method is proposed. This method serves the characterization and suitability assessment of high‐power, high‐bandwidth current sensors for fast‐switching applications using SiC power MOSFETs. Conducting a small‐ and a large‐signal transmission behaviour analysis separately results in holistic information about the current sensor behaviour in both time and frequency domain. The proposed method is validated using four commercially available current sensors that are widely used for SiC power MOSFET characterization. The work concludes transferring the knowledge derived in the conducted experiments to a practical, application‐oriented sensor selection guide.

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Section: Current Sensor Performance Evaluation Methodsmentioning

confidence: 99%

On performance evaluation of high‐power, high‐bandwidth current measurement technologies for SiC switching devices

Philipps,

Peftitsis

2024

IET Power Electronics

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“…This work focuses only on current-mirror sensing; other current sensing methods such as shunt-sensor [ 39 , 40 , 41 , 42 , 43 ] or hall-sensor [ 44 ] integration, as well as related magnetic flux concentrators [ 45 ] or magnetic sensors [ 46 ], were also demonstrated in GaN technologies. External current sensors or two-chip solutions (GaN and Si) are also often used and investigated for GaN power electronics [ 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 ]. State-of-the-art low-voltage GaN motor inverters today still use at least three half-bridge ICs and three sense resistors [ 3 , 58 , 59 ].…”

Section: Introductionmentioning

confidence: 99%

Three-Phase Motor Inverter and Current Sensing GaN Power IC

Moench

Reiner

Basler

et al. 2023

Sensors

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A three-phase GaN-based motor inverter IC with three integrated phase current mirror sensors (sense-FETs or sense-HEMTs, 1200:1 ratio), a temperature sensor, and an amplifier is presented and experimentally operated. The three low-side currents are read out by virtual grounding transimpedance amplifiers. A modified summed DC current readout circuit using only one amplifier is also discussed. During continuous 24 V motor operation with space-vector pulse width modulation (SVPWM), the sensor signal is measured and a bidirectional measurement capability is verified. The measured risetime of the sensor signal is 51 ns, indicating around 7 MHz bandwidth (without intentional optimization for high bandwidth). The IC is operated up to 32 V on DC-biased semi-floating substrate to limit negative static back-gating of the high-side transistors to around −7% of the DC-link voltage. Analysis of the capacitive coupling from the three switch-nodes to the substrate is calculated for SVPWM based on capacitance measurement, resulting in four discrete semi-floating substrate voltage levels, which is experimentally verified. Integrated advanced power converter topologies with sensors improve the power density of power electronics applications, such as for low-voltage motor drive.

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“…The authors in [15][16][17][18] show a way to significantly increase the bandwidth of the Hall sensor. The described method allows for the addition of an HFCT that will be designed to carry signals with a much higher frequency than the Hall sensor.…”

Section: Introductionmentioning

confidence: 99%

“…Additionally, there is also the problem of mismatching the amplification characteristics of both sensors [15], which is related to the resistances of the current transformer. An example of the application of tunnel magnetoresistance (TMR) sensors with RC is described in [17]. The high-bandwidth probe up to 315 MHz is described there too.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Wide Bandwidth and Inexpensive Current Sensor for Power Electronics—An Augmented LEM Current Sensor

et al. 2021

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This paper presents the overall concept of a wideband and cost-effective current sensor. The sensor consists of a paralleled Hall-based current sensor (LEM) and a wideband current transformer (CT). A significant improvement of the band range and the moderate cost of the proposed sensor enable it to be used both to measure the instantaneous value in order to precisely plot the current and to obtain signals for a closed-loop control system of high-frequency power electronic converters. The sensor should be considered as an Augmented LEM Current Sensor (ALCS), which allows it to measure low- and high-frequency current signals. Finally, it allows for the measurement of a bipolar current up to 40 A. The overall cost of the sensor, along with the previously mentioned benefits, is an important feature of the proposed sensor. The present paper presents the analytical concept of the sensor (ALCS), a theoretical approach using simulation analysis, and the experimental results, which clearly demonstrate the wide range of the sensor in dynamic and static measurements.

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Wide Bandwidth Current Sensor for Commutation Current Measurement in Fast Switching Power Electronics

Cited by 18 publications

References 10 publications

On performance evaluation of high‐power, high‐bandwidth current measurement technologies for SiC switching devices

On performance evaluation of high‐power, high‐bandwidth current measurement technologies for SiC switching devices

Three-Phase Motor Inverter and Current Sensing GaN Power IC

Wide Bandwidth and Inexpensive Current Sensor for Power Electronics—An Augmented LEM Current Sensor

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