Wide cell pitch 1200 V NPT CSTBTs with short circuit ruggedness

Nakamura, Hiroki; Nakamura, K.; Kusunoki, S.; Takahashi, Hideki; Tomomatsu, Y.; Harada, M.

doi:10.1109/ispsd.2001.934614

Cited by 14 publications

(8 citation statements)

References 3 publications

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“…Fabrication of the trench is, however, complex and defects such as birds-beak at the top of the trench occur due to processing variations [11], [12]. The SPT [13], fieldstop (FS) [14] or light punch-through (LPT) [15] designs offer a compromise between the punch through (PT) and non-punch through (NPT) IGBT structures, providing an initial fast turn-off typical of NPT but eliminating the long tail [13], [16]. Compared to the PT design, the SPT has a soft turn-off behaviour reducing noise, overshoot and electromagnetic interference (EMI) issues [13] and a positive coefficient of temperature with resistance, making it suitable for paralleling devices for use in higher power applications [13], [16].…”

Section: Introductionmentioning

confidence: 99%

Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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Three-dimensional modelling is becoming an increasingly prevalent technique to model more complex device structures. However, this alone is insufficient to accurately model large area devices. This study images the birds-beak in a commercial Insulated Gate Bipolar Transistor (IGBT) and highlights how this processing uncertainty, which impacts the channel properties, has a strong effect on the accuracy of TCAD simulations; resulting in the designer struggling to validate models and underappreciating the true behaviour of the device. It has been demonstrated that the birds-beak effect can be accounted for by a simple two-device model which allows for small-scale and large-scale device behaviours to be matched while limiting the computational effort for designers. The practical effects of birdsbeaking on device performance has also been considered, and it has been shown that the variation in threshold voltage across the chip area results in a 32% reduction in short-circuit endurance time for the device. To overcome this, an alternative n+ emitter implantation is proposed, using a combination of arsenic and phosphorus, so that the device threshold is unaffected by the presence of birds-beaking and its variation during processing.

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Section: Introductionmentioning

confidence: 99%

Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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“…As shown in Figure 4, the generation of device proceeds only at the moment when the fundamental tradeoff relationship between V on and E off shifts to the closer position from the origin of the graph. In our case, the generation of IGBT proceeds from the planar gate designed by a 3 micro-meter rule to the planar gate of the sub-micron design rule [2], further to the trench gate type [3,9] and CSTBT TM [4,5,7,8], to today's current generation of 600 V class known as the 7th IGBT [6,13] as the LPT type device, LPT type devices are explained in detail in a later part of this paper.…”

Section: Introductionmentioning

confidence: 99%

“…But this historical trench gate type IGBT's large saturation current in the on-state requires a protection circuit to compensate the small SCSOA. To overcome the above dilemma of a low V on characteristic maintaining a low I sat characteristic consistently, the latter two structures of a standard CSTBT TM and a wide cell pitch type CSTBT TM were applied at almost the same time in case of 1200 V [8,12]. The CSTBT TM structure, which has an extra n-type CS (Carrier Stored) layer underneath the p-type MOSFET body region, stores the positive charged holes just underneath the p-type body region.…”

Section: Introductionmentioning

confidence: 99%

Future trend of Si power device

Minato

Sato

2014

IEICE Electron. Express

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As a FOM (Figure Of Merit), the power density of a power module has grown in an almost constant ratio for the past 20 years in the field of power electronics. This progress has been achieved by the joint development of power chips and a package. A combination of an IGBT (Insulated Gate Bipolor Transistor) and an FWD (Free Wheeling Diode) is the most frequent combination of power chips for a power module. The progress of both IGBT and diode is based not only upon the development of device structures but also upon the progress of the wafer process technology, which is derived from a LSI (Large Scale Integrated circuit) process and optimised for the power device. The package technology for power devices is uniquely developed for high reliability even for high power density application. This paper reports both the power chip and the package technologies up to the latest generation for the IGBT power module.

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“…5d. By selecting appropriate trench spacing and depth the series resistance and performance of the MOS and diode regions can be optimized to provide low on-state voltage while maintaining low shortcircuit saturation current [4]. The short-circuit saturation current can be adjusted to provide short-circuit withstanding capability of 20µs eliminating the need for additional limiting circuits.…”

Section: New 1200v Cstbt Chipmentioning

confidence: 99%

“…1 can be decreased by increasing the total channel width per unit chip area. High-density trench gate surface structures have been developed to provide a substantial increase in channel width [2] [4]. At the same time the trench gate structure eliminates the parasitic JFET resistance associated with the MOSFET.…”

Section: Introductionmentioning

confidence: 99%

New MEGA POWER DUAL/spl trade/ IGBT module with advanced 1200 V CSTBT chip

Yamada

Donlon³

et al.

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)

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A new 1400A/1200V MEGA POWER DUAL™ IGBT module has been developed for high power industrial applications. The new module incorporates the latest advances in chip technology to produce a device with the rugged safe operating area and low losses required in high power industrial applications. The new power chip is based on an optimized wide cell pitch Carrier Stored Trench Bipolar Transistor (CSTBT). The module features an optimized high current dual (half bridge) package with low parasitic inductance and integrated features designed to allow simplified assembly of high power inverters.

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Wide cell pitch 1200 V NPT CSTBTs with short circuit ruggedness

Cited by 14 publications

References 3 publications

Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak

Modeling of Large Area Trench IGBTs: The Effect of Birds-Beak

Future trend of Si power device

New MEGA POWER DUAL/spl trade/ IGBT module with advanced 1200 V CSTBT chip

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