Wide modulation bandwidth terahertz detection in 130 nm CMOS technology

Nahar, Shamsun; Shafee, Marwah; Blin, S.; Pénarier, A.; Nouvel, P.; Coquillat, Dominique; Safwa, Amr M.E.; Knap, W.; Hella, Mona M.

doi:10.1051/epjap/2016160302

Cited by 9 publications

(4 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…FET shows the response towards THz beyond its cutoff frequency even at room temperature irrespective of semiconductor material systems [22,[24][25][26][27][28]. The Dyakonov-Shur plasma wave theory [22,23] classically explains the THz behavior of the device starting from conventional semiconductors like Si, GaAs, and GaN to recently developed 2D materials system like graphene, MoS 2 ,WS 2 , black phosphorous, and others.…”

Section: Results and Discussion On Experimental Outcomementioning

confidence: 99%

See 1 more Smart Citation

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Kaneriya¹,

Rastogi²,

Basu³

et al. 2022

Terahertz Technology

View full text Add to dashboard Cite

Terahertz (THz) technology has attracted tremendous attention recently due to its promising applications in various domains such as medical, biological, industrial imaging, broadband, safety, communication, radar, space science, and so on. Due to non-availability of powerful sources and highly sensitive and efficient detectors, the so-called THz gap remains largely unfilled. Despite seamless efforts from electronics and photonics technology researchers, the desired level of technology development to fill the THz gap still remains a challenge. GaN-based HEMT structures have been investigated as potential THz sources and detectors by a number of researchers. This chapter presents a very new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) GaN high electron mobility transition (HEMT) devices. ISBT phenomena are usually demonstrated in photonic devices like a quantum cascade laser (QCL). Here we explore ISBT in an electronic GaN HEMT device. Conventional photonic devices like a QCL are operated at cryogenic temperature to minimize thermal effect. Tuning the conduction band through external gate bias is an advantage of an HEMT device for room temperature (RT) THz applications. This chapter demonstrates the theoretical and experimental novel ISBT phenomenon in GaN HEMT is for potential ambient applications in the THz range.

show abstract

Section: Results and Discussion On Experimental Outcomementioning

confidence: 99%

“…There are several reports available in which the plasma wave theory is used to describe the THz behavior of devices. The plasma wave theory concept has been widely demonstrated in conventional semiconductors like Si [24], GaAs [22], GaN [25], and InP [26] as well as in new two-dimensional…”

Section: Polarization In Gan Heterostructurementioning

confidence: 99%

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Kaneriya¹,

Rastogi²,

Basu³

et al. 2022

Terahertz Technology

View full text Add to dashboard Cite

show abstract

“…The detection mechanism is demonstrated by a generation of a DC drain-source voltage in the irradiated MOSFET with the open drain terminal. The effect was theoretically predicted by Dyakonov and Shur [3] and this phenomenon led to several applications in imaging and, more recently, in telecommunication areas [4,5]. It is a common practice to use CMOS technology to enable the integration of detectors with antennas and readout systems.…”

Section: Introductionmentioning

confidence: 94%

Application of High-Resistivity Silicon Substrate for Fabrication of MOSFET-Based THz Radiation Detectors

et al. 2018

View full text Add to dashboard Cite

It is well known that integration of THz detectors with silicon lenses (made of high-resistive Si) brings several advantages including a significant increase of the detector responsivity due to the increased aperture of the detector. THz detectors manufactured in CMOS technology are based usually on a n-type sensing transistor monolithically integrated with an antenna fabricated in the same process sequence. Integration of such a detector with Si lens is not an easy task. The simplest way is to introduce the THz radiation through the silicon lens glued to the substrate, which then has to be made (if possible) of high-resistive silicon to avoid energy losses. Following results of several experiments described in this paper our CMOS process sequence has been modified both with respect to the substrate change and then maximizing of the antenna efficiency by removal of heavily doped areas of the channel stopper in its vicinity

show abstract

“…Among room temperature technologies for millimeter-wave (mm-wave)/ THz detection, one can consider field effect transistor (FET) detectors 39 – 47 , Graphene or 2D material-based structures 48 – 55 , diodes and rectifiers 56 – 58 , photoconductive detectors 59 , 60 , and bolometers 61 , 62 . The sensing mechanism in FET detectors is generally through the direct voltage induced in the channel according to the plasma waves 63 .…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

et al. 2023

View full text Add to dashboard Cite

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-metal transition threshold voltage to the incident wave. The detection concept is demonstrated through actuation of biased VO2 switches encapsulated in a pair of coupled antennas by interrupting coplanar waveguides for broadband measurements, on silicon substrates. Ultimately, we propose an electromagnetic-wave-sensitive voltage-controlled spike generator based on VO2 switches in an astable spiking circuit. The fabricated sensors show responsivities of around 66.3 MHz.W−1 at 1 μW, with a low noise equivalent power of 5 nW.Hz−0.5 at room temperature, for a footprint of 2.5 × 10−5 mm2. The responsivity in static characterizations is 76 kV.W−1. Based on experimental statistical data measured on robust fabricated devices, we discuss stochastic behavior and noise limits of VO2 -based spiking sensors applicable for wave power sensing in mm-wave and sub-terahertz range.

show abstract

Wide modulation bandwidth terahertz detection in 130 nm CMOS technology

Cited by 9 publications

References 30 publications

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

A Novel Approach for Room-Temperature Intersubband Transition in GaN HEMT for Terahertz Applications

Application of High-Resistivity Silicon Substrate for Fabrication of MOSFET-Based THz Radiation Detectors

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Contact Info

Product

Resources

About