Wide-temperature-range 10.3 Gbit/s operations of 1.3 µm high-density quantum-dot DFB lasers

Kan, Tetsuo; Tao, Yu; Matsumoto, Takeshi; Ekawa, Mitsuru; Song, Hai‐Zhi; Nakata, Yoshihiro; Yamaguchi, Masaomi; Nishi, Kenichi; Yamamoto, Tsuyoshi; Sugawara, Mitsuru; Arakawa, Yasuhiko

doi:10.1049/el.2010.3312

Cited by 42 publications

(21 citation statements)

References 8 publications

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“…Thus DFB lasers require an oxide-free surface prior to the second epitaxy which can be realized by InGaP claddings. The broad emission spectra of QD active structures in DFB lasers enables temperature stable long wavelength operation, and is likely to be beneficial for high speed mode locking [Tak11].…”

Section: Discussionmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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Section: Discussionmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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“…In addition, DFB lasers were also fabricated [7,8] using same active layer as FP lasers. We grew p-type AlGaAs lower cladding layers, 8-stacked QD active layers as same as FP laser as shown above, and n-type GaAs layers on a p-type GaAs substrate by using molecular beam epitaxy.…”

Section: Device Fabrication and Characterizationmentioning

confidence: 99%

“…Fabricated QD DFB lasers emitting at 1.3 rature-stable operations over a wide temperature range from -40 to 80°C [7,8]. In order to develop DFB lasers operating under high-temperature environments over 125°C, the design of the so-called detuning between the lasing wavelength and the gain peak wavelength needs to be adjusted at a different value from that applied in the QD DFB lasers for optical communications.…”

Section: Dfb Lasersmentioning

confidence: 99%

“…Temperature insensitive operation of semiconductor lasers with quantum-dot (QD) active layers were theoretically predicted [3]. Recent progress of epitaxial growth technology enhances the QD laser characteristics such as very low threshold current density operation of Fabry-Perot (FP) laser [4], very low threshold current operation of VCSEL [5], high characteristic temperature T 0 of 600 K [6], 25 Gbps operation of FP laser [6], and 10 Gbps distributed feedback (DFB) laser [7,8,11]. However, no lasing operation of the QD laser over 200°C has been reported.…”

Section: Introductionmentioning

confidence: 99%

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Long-wavelength quantum dot FP and DFB lasers for high temperature applications

et al. 2012

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High temperature (>125°C) resistant long-wavelength semiconductor lasers are attractive as light sources in a variety of harsh environments. Here, we report extremely high temperature continuous-wave (CW) operation of QD lasers on GaAs substrate emitted at 1300-nm-range by enhancing gain and increasing the quantized-energy separation of the QD active layers. A suppression of the In out-diffusion during MBE from self-assembled InAs QDs significantly reduced inhomogeneous broadening with high QD sheet density maintained. QD-FP laser exhibited record high CW-lasing temperature for long-wavelength laser of 220°C and QD-DFB laser also exhibited high CW-lasing temperature of 150°C by employing high gain QD active media.

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“…Due to the relative high losses inherent to these technologies the lasers still need two facets for lasing operation, which complicates monolithic integration. We present here an index grating fabricated by a two-step growth process, comparable to [7] and [8], for multi-section DFB lasers. QD EAMs were predicted by [9] and statically demonstrated by [10] and [11] before.…”

Section: Introductionmentioning

confidence: 99%

Quantum-dot based distributed feedback lasers and electro-absorption modulators for datacom applications

Bimberg

Stubenrauch

Stracke

et al. 2012

2012 14th International Conference on Transparent Optical Networks (ICTON)

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The unique properties of quantum dots (QDs) as gain material for semiconductor lasers result in advantageous characteristics like high temperature stability, low noise, low feedback sensitivity and low chirp. Their low internal losses make QD based devices suitable for high-speed telecommunication applications. Increase of data transmission rate by wavelength division multiplexing techniques requires temperature stable longitudinal single-mode transmitters. We present 1.3 µm index-coupled QD distributed feedback (DFB) lasers with p-doped active region showing wide temperature independent operation, high side-mode suppression ratio (> 55 dB) and quantum efficiencies up to 40%. The data rate achieved by direct modulation is exceeded by using QD electroabsorption modulators (EAMs) based on the Quantum-Confined Stark Effect. Presently we achieve a 3 dBbandwidth of 17 GHz and extinction ratios of 18 dB. Monolithic integration of both, DFB and EAM, into a single two-section device provides an inexpensive transmitter unit suitable for metropolitan area network applications. Keywords: quantum dot, electro-absorption modulator, distributed feedback laser. INTRODUCTIONIn the next years the demand on data transmission rate will exceed the intrinsic speed of directly modulated semiconductor lasers. With wavelength division multiplexing techniques the data rates can be increased by the factor of used channels. Therefore distributed feedback lasers, providing longitudinal single-mode emission, are in demand for reducing the spacing between each channel. To increase the data transmission rate single channel electro-absorption modulated distributed feedback lasers (EADFB) based on quantum wells (QW) are used [1]. These two-section devices consist of a DFB laser part and a modulator part. The DFB laser provides a constant single-mode emission and the EAM modulates the output power. These electro-absorption modulators are based on the Quantum-Confined Stark Effect (QCSE) that results in a red shift of the absorption under an applied external electric field [2]. Such devices require insensitivity to temperature variations, optical feedback and low chirp. Thus self-organized semiconductor quantum dot (QD) lasers are largely advantageous as compared to QW lasers for such applications [3,4].In this work we focus on demonstrating separately an advanced type of QD DFB laser and QD EAM modulators, which will be monolithically integrated in a following step. In the last years several groups developed QD DFB lasers for the 1.3 µm wavelength range using different technologies, e.g. metal gratings for complex-coupling and lateral gratings [5,6]. Due to the relative high losses inherent to these technologies the lasers still need two facets for lasing operation, which complicates monolithic integration. We present here an index grating fabricated by a two-step growth process, comparable to [7] and [8], for multi-section DFB lasers. QD EAMs were predicted by [9] and statically demonstrated by [10] and [11] before. We fabricated and characteriz...

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Wide-temperature-range 10.3 Gbit/s operations of 1.3 µm high-density quantum-dot DFB lasers

Cited by 42 publications

References 8 publications

Design and Realization of Novel GaAs Based Laser Concepts

Design and Realization of Novel GaAs Based Laser Concepts

Long-wavelength quantum dot FP and DFB lasers for high temperature applications

Quantum-dot based distributed feedback lasers and electro-absorption modulators for datacom applications

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