Wide temperature range compact modeling of SiGe HBTs for space applications

Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling

“…A comparison of this work with other published models for cryogenic characteristics of SiGe HBTs is demonstrated in Table II. [11], [12] presents the model with the temperature scaling, but not for the most advanced SiGe HBTs, and did not go to a lower temperature than 43 K. [13] provide the small-signal model with different model parameters for each temperatures. The bias scaling of the simulation was not shown.…”

“…The standard SPICE Gummel-Poon model with an extension can capture the experimental DC performance down to 78 K [11]. The MEXTRAM extensions have been reported in [12] for DC characteristics down to 43 K and for AC characteristics down to 93 K. Additionally, [9], [13] predict the measurement down to 15 K, but only for selected single bias or temperature point.…”

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

“…4. This non-ideal base current is related to the heavy doping nature of the baseemitter, which is called trap-assisted tunneling (TAT) current [41,42]. Due to the decreasing defect density in the state-of-art device fabrication, the TAT current is typically negligible at room temperature.…”

Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics

“…The model is based on Mextram 504.6 , with major extensions developed to increase the applicable temperature range. Details of the model can be found in and . Complete direct current (DC) and S‐parameter measurements were made at 393, 300, 223, 162, and 93 K for device characterization and parameter extraction on a SiGe HBT with an emitter area of 0.5×2.5 μ m 2 .…”

“…In general, the process design kits from integrated circuit (IC) foundries fail to run or else give erroneous results outside its intended temperature range, typically from ‐55 ∘ C to +120 ∘ C (223 to 393 K) . To enable IC designs for extreme environments, we have recently developed a SiGe HBT compact model that can function from 93 to 393 K . Using this new model, we investigate SiGe HBT noise parameters and Low‐Noise Amplifier (LNA) designs as a function of temperature.…”