Wideband 400 W pulsed power GaN HEMT amplifiers

Krishnamurthy, K.; Martin, Jan M. L.; Landberg, B.; Vetury, R.; Poulton, Matthew

doi:10.1109/mwsym.2008.4633163

Cited by 18 publications

(8 citation statements)

References 11 publications

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“…Electromagnetic Field Simulation is used in the simulation of power die, tube, bonding wire, single layer capacitor and other passive components to improve the accuracy of simulation [8] . The simulation of the schematic does not take into account of the coupling among the devices, so there will be a certain gap compared with the actual circuit.…”

Section: Circuit Simulationmentioning

confidence: 99%

A P-band GaN Power Amplifier with LRC-LC Stability Network

Ma¹,

Duan²,

Yang³

2017

Proceedings of the 2nd International Conference on Mechatronics Engineering and Information Technology (ICMEIT 2017)

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Abstract.A P-band high-efficiency, high power GaN power amplifier is designed and relized on the basis of the push-pull structure. The LRC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The LRC-LC stability network can significantly reduce the high gain out the band, which eliminate the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5dBm (700W) power output with a 17dB gain and 85% PAE at 500-600MHz, 300us, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad.

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Section: Circuit Simulationmentioning

confidence: 99%

A P-band GaN Power Amplifier with LRC-LC Stability Network

Ma¹,

Duan²,

Yang³

2017

Proceedings of the 2nd International Conference on Mechatronics Engineering and Information Technology (ICMEIT 2017)

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“…In the past, the power available from individual solid-state devices has been limited when compared with vacuum tube devices. Recently, significant progress has been made on GaN high-electron-mobility transistors (HEMT) for highpower solid-state power amplifiers (SSPAs) [7][8][9][10][11][12][13][14][15][16][17]. Using pulse compression techniques, radar systems using SSPAs show similar performance to that of vacuum tubes [7].…”

Section: Introductionmentioning

confidence: 99%

“…Using pulse compression techniques, radar systems using SSPAs show similar performance to that of vacuum tubes [7]. The GaN HEMT amplifier in [12] produces a 400 W output power in Class-AB pulse mode for a 3.5 GHz WiMAX base station. The work in [14] presents an X-band 100 W pulse mode GaN amplifier for radar systems.…”

Section: Introductionmentioning

confidence: 99%

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An X-Band 100 W Gan Hemt Power Amplifier Using a Hybrid Switching Method for Fast Pulse Switching

Kim¹,

Cho²,

Kwon³

et al. 2017

PIER B

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Abstract-This paper presents a new hybrid switching technique for enhanced pulsemode solid-state power amplifiers (SSPAs). In the proposed technique, pulse timing for bias stabilization is effectively decoupled from pulse amplification. The decoupling allows fast pulse switching by reducing the pulse width and increasing the pulse repetition frequency (PRF). The new switching method is applied to an X-band SSPA using GaN HEMT. The advantage of the proposed method is demonstrated by its excellent pulse characteristic. The proposed technique achieves a fast PRF of 100 kHz and a narrow pulse width of 1 µsec. The measured rise/fall time(RFT) is 12.5/11.1 nsec, which is more than four times less than that of previous works. In addition, an excellent pulse droop of 0.43 dB is achieved with an output power of 51.3 dBm at 9.9 GHz. The fabricated SSPA shows a maximum output power of 135 W, a small signal gain of 47 dB, and power added efficiency (PAE) of 28.2% at 9.9 GHz. These results show that the proposed pulse switching technique provides a promising solution for SSPAs using a high-power GaN HEMT.

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“…Famous abilities have been demonstrated by several papers [1,2]. The capability of generating high RF output power makes AlGaN/GaN HEMTs an appealing alternative to traditional GaAs and InP devices [3].…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques

Raj¹,

Bindra²

2013

IJCA

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In this paper, the temperature dependent electrical measurements by employing a Quantum Focus Instrument (QFI) and analytical analysis were presented and applied to Aluminum Gallium Nitride, Gallium Nitride (AlGaN-GaN) High Electron-Mobility Transistors (HEMTs). The analytical evaluation of band bap energy, electron mobility, thermal conductivity and thermal resistance has been carried out. The electrical measurements have been done using network analyzer with infrared IR measurement technology. The results obtained on the basis of electrical measurements are compared with analytical and simulated results for the purpose of validation of our outcomes. The measured data shows a good agreement with analytical and simulated results, thereby validating our approach of AlGaN/GaN HEMT analysis.

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Wideband 400 W pulsed power GaN HEMT amplifiers

Cited by 18 publications

References 11 publications

A P-band GaN Power Amplifier with LRC-LC Stability Network

A P-band GaN Power Amplifier with LRC-LC Stability Network

An X-Band 100 W Gan Hemt Power Amplifier Using a Hybrid Switching Method for Fast Pulse Switching

Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques

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