Wideband cryogenic on-wafer measurements at 20 ? 295 K and 50-110 GHz

Abstract

A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows onwafer S-parameter measurements of active and passive devices at this frequency range. The Sparameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented at temperatures of 20, 80, 160, and 295 K and in the frequency range of 50 -110 GHz.

RF Probe Technology: History and Selected Topics

“…Within only three decades, RF probing technology made amazing progress from "it cannot be done" (late 1970s [1], [2]) to commercially available solutions for an extremely wide application range: impedance matching, multiport, differential and mixed-signal measurement up to 110 GHz (e.g., [3], [4]), temperatures beyond 500 °C [5] and down to 4 K (e.g., [6]- [8]), high-power measurements up to 60 W in continuous-wave mode [9], and terahertz (THz) applications up to 750 GHz ( Figure 1) [10], [11].…”

Cryogenic probing of mm-Wave MMIC LNAs for large focal-plane arrays in radio-astronomy

“…Several groups have worked on the development of cryogenic probe stations for HEMT characterization [7] - [10]. Most of these systems target device-physics studies and therefore cover frequencies below 50 GHz; at higher frequencies modeling is difficult because the parasitic effects of the device environment become significant.…”

“…Most of these systems target device-physics studies and therefore cover frequencies below 50 GHz; at higher frequencies modeling is difficult because the parasitic effects of the device environment become significant. The only other published cryogenic system operating at W-band [10] presents S-parameter measurements, not noise temperature, and does not describe the throughput or whether the measurement is destructive. In this paper, we demonstrate a new use for a cryogenic probe station (CPS) [11], in which we rapidly and non-destructively characterize cryogenic S-parameters and noise temperature of a large number of W-band MMIC LNAs, in a single thermal cycle.…”