Wideband DHBTs using a graded carbon-doped InGaAs base

Dahlstrom, M.; Fang, X. M.; Lubyshev, D.; Urteaga, M.; Krishnan, S.; Parthasarathy, N.; Kim, Y.M.; Wu, Ying; Fastenau, J. M.; Liu, W.K.; Rodwell, M.J.W.

doi:10.1109/led.2003.815009

Cited by 43 publications

(16 citation statements)

References 10 publications

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“…To determine the physical parameters of the devices, stated in table 111, the methodology of [I] was used. The base contact resistance and base sheet resistivity are all consistent with values obtained in our laboratov [3]. The 160 Gbit/s devices have a very small bas-tter separation as well as a small base mesa Devices with dimensions similar to the proposed devices have already been manufactured in the GaAs system.…”

Section: Devices For 80 and 160gbith Applicationssupporting

confidence: 82%

See 1 more Smart Citation

Thermal limitations of InP HBT's in 80 and 160 Gbits/sup -1/ IC's

Harrison

Dahlstrom²,

Krishnan³

et al.

International Conference onIndium Phosphide and Related Materials, 2003.

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A 3D thermal model based on finite elements has been developed for the analysis of the thermal resistance of I d ' heterojunction bipolar transistors. The model was verified by comparing simulated and experimental results. The simulations also show that the maximum temperature in the device can be significantly higher than the experimentally determined base-emitter junction temperature. By applying scaling laws, a road map for 80Gbit/s and 160Gbit/s devices is presented. Simulations show that devices suitable for I6OGbit/s circuits will be thermally possible if the InGaAs etch stop or contacting layer is removed from the sub collector.I Introduction 40Ghitk integrated circuits (ICs) are becoming commercially available. Two major competing technologies are SiGe heterojunction bipolar transistors (HBTs) and InP HBTs. While very high mm wave power gains have been obtained with single heterojunction devices (SHBT), they suffer from low breakdown voltages and high thermal resistance because of the narrow hand gap InGaAs collector. To overcome these inherent problems, a double heterosmcture bipolar transistor (DHBTs), which has an InP collector, can be used. Devices of this kind have been reported with a fm in excess of 4SOGHz [2,3]. These results indicate that DHBTs have potential applications in 80Gbitk and 16OGhitk ICs. This is reinforced by recent observations of frequency dividers operating above 80GHz [4,5]. As device design is modified for 80-160Gbitsis applications, the current density within the device will greatly increase resulting in higher device temperatures and so accurate thermal design is critical for accurate circuit simulation and reliability studies.Thermal modeling of HBTs has, to date, centered on power amplifiers [6]. These studies have concentrated on modeling the beat flow in the substrate using a semi-analytical approach developed for Si BJT's [7]. The method does not account for (1) the temperature gradients within tbe device wbicb are significant in sub-micron HBT's or (2) heat flow through the emitter metalisation which can be high as 20% of the total heat dissipated.Before circuits can he marketed, the device reliability must be assessed and this has driven an interest in the thermal resistance of InP HBTs. [9,10] For 80 and 160 and probably 4OGbit/s applications, DHBTs will be used because of their lower thermal resistance. This paper examines the thermal performance of devices for the 80 and 160 GbiUs applications by modeling the heat flow in 3D. Device ScalingTo achieve high-speed performance, an increase in the current density (J) will allow a device with a smaller collectorbase junction area to be used in the circuit, so reducing Cbc. However, J cannot he increased indefinitely because of the Kirk Effect.If the collector doping No is chosen so that the collector is fully depleted at zero bias current and the applied V,, the maximum current density through the emitter junction is approximately given by 0-7803-7704-4/03/$17.0oo2o03 IEEEwhere E is the dielectric constant of the collector...

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Section: Devices For 80 and 160gbith Applicationssupporting

confidence: 82%

“…To overcome these inherent problems, a double heterosmcture bipolar transistor (DHBTs), which has an InP collector, can be used. Devices of this kind have been reported with a fm in excess of 4SOGHz [2,3]. These results indicate that DHBTs have potential applications in 80Gbitk and 16OGhitk ICs.…”

mentioning

confidence: 81%

Thermal limitations of InP HBT's in 80 and 160 Gbits/sup -1/ IC's

Harrison

Dahlstrom²,

Krishnan³

et al.

International Conference onIndium Phosphide and Related Materials, 2003.

Self Cite

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“…The HBT structure used in this work is a standard double heterojunction design with InP collector and emitter, and with a 400Å thick InGaAs base C-doped at $4 Â 10 19 cm À3 . An InGaAs setback layer and chirped super-lattice grade were used to remove the conduction band discontinuity at the base-collector interface [14].…”

Section: Methodsmentioning

confidence: 99%

Monolithic integration of InP-based transistors on Si substrates using MBE

Liu

Lubyshev

Fastenau

et al. 2009

Journal of Crystal Growth

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“…In a DHBT, although a wide bandgap collector provides a high breakdown voltage, smooth current injection from the base to the collector is prevented by the conduction-band discontinuity. Insertion of quaternary [11] or superlattice [12] layers between the base and collector is effective to obtain a smooth current flow. When GaAsSb is used as a base, the heterojunction with InP becomes a Type II or staggered junction, and smooth electron injection is obtained although the diffusion constant of GaAsSb is lower than that of InGaAs [13].…”

Section: Hbtmentioning

confidence: 99%

Recent progress in compound semiconductor electron devices

Miyamoto

2016

IEICE Electron. Express

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Compound semiconductor electronic devices have the capability to provide high-speed operation as they have higher mobility than Si. At present, compound semiconductor devices are popular as parts of consumer electronics such as wireless communication devices or satellite television. Introduction of wide bandgap compound semiconductors has increased the use of compound semiconductor devices in base stations of cellular phone systems and as replacements for vacuum tubes. More recently, the research on InGaAs MOSFET has been directed towards realization of its potential as an alternative for silicon. This review explains the present commercialization of compound semiconductor devices in consumer electronics, and its state-of-art results such as the 529-GHz dynamic frequency divider using InGaAs heterojunction bipolar transistors, the 1-THz amplification provided by the InGaAs highelectron-mobility transistor (HEMT), and the power of 3 Wmm −1 provided by the GaN HEMT at 96 GHz. The InGaAs MOSFET as the next candidate for logic circuit components, is also explained.

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Wideband DHBTs using a graded carbon-doped InGaAs base

Cited by 43 publications

References 10 publications

Thermal limitations of InP HBT's in 80 and 160 Gbits/sup -1/ IC's

Thermal limitations of InP HBT's in 80 and 160 Gbits/sup -1/ IC's

Monolithic integration of InP-based transistors on Si substrates using MBE

Recent progress in compound semiconductor electron devices

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