2016
DOI: 10.2109/jcersj2.16023
|View full text |Cite
|
Sign up to set email alerts
|

Wideband dielectric spectroscopy of (Sr<sub>0.7</sub>Bi<sub>0.2</sub>)TiO<sub>3</sub> ceramics and its microscopic mechanism of polarization

Abstract: (Sr 0.7 Bi 0.2 )TiO 3 ceramics were fabricated by a solid state reaction, and a wideband dielectric spectrum was measured for understanding the microscopic polarization mechanism of (Sr 0.7 Bi 0.2 )TiO 3 ceramics. It was revealed that the dielectric permittivity of (Sr 0.7 Bi 0.2 )TiO 3 ceramics at 25°C was determined by dipole polarization as well as ionic polarization, whereas the permittivity of SrTiO 3 is mainly determined only by ionic polarization. The temperature dependence of permittivity suggested tha… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
21
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 34 publications
(21 citation statements)
references
References 32 publications
0
21
0
Order By: Relevance
“…The γ values for 0.9SBT‐0.1BMT/BMZ/BMH ceramics are 1.49, 1.49, and 1.60, respectively, showing high degree relaxor component, while the addition of Ti/Zr/Hf has minimal impact on the diffuseness. As shown in Figure A‐C, the T m of SBT‐based ceramics are around −50°C, being higher than that of pure SBT (around −100°C) . From room temperature to 200°C, the dielectric losses of all ceramics are less than 1% at 1 kHz, slightly increase with increasing frequency, being relevant to the relaxor component.…”
Section: Resultsmentioning
confidence: 90%
See 1 more Smart Citation
“…The γ values for 0.9SBT‐0.1BMT/BMZ/BMH ceramics are 1.49, 1.49, and 1.60, respectively, showing high degree relaxor component, while the addition of Ti/Zr/Hf has minimal impact on the diffuseness. As shown in Figure A‐C, the T m of SBT‐based ceramics are around −50°C, being higher than that of pure SBT (around −100°C) . From room temperature to 200°C, the dielectric losses of all ceramics are less than 1% at 1 kHz, slightly increase with increasing frequency, being relevant to the relaxor component.…”
Section: Resultsmentioning
confidence: 90%
“…As shown in Figure 3A-C, the T m of SBT-based ceramics are around −50°C, being higher than that of pure SBT (around −100°C). 26 From room temperature to 200°C, the dielectric losses of all ceramics are less than 1% at 1 kHz, slightly increase with increasing frequency, being relevant to the relaxor component. The relatively low losses are very importance for thermal stability at high applied electric field, because the generated heat per unit volume is proportional to the dielectric loss, therefore the low dielectric loss is beneficial to the reduced heat generation and the possibility of the thermal breakdown.…”
Section: Dielectric and Ferroelectric Characterizationsmentioning
confidence: 96%
“…Figure 3f gives the γ values of (1-x)SBT-xBMZ ceramics, being above 1.5, indicating relaxor characteristics. With increasing BMZ, the maximum permittivity (ε m ) at 1 kHz for ceramics with x up to 10% are similar, but the T m increases gradually from −68 • C to −27 • C, higher than the T m of (Sr 0.7 Bi 0.2 )TiO 3 ceramics which is around −100 • C [30]. The lower permittivity and higher dielectric loss for samples with x = 15% may be related to the secondary phase.…”
Section: Dielectric and Energy-storage Characterizations For (1−x)sbtmentioning
confidence: 91%
“…13−15 In addition, our recent study showed the grain sizes of 10 mol % Bi(Mg 0.5 Me 0.5 )O 3 (Me = Ti, Zr, and Hf, BMT/BMZ/BMH)-modified (Sr 0.7 Bi 0.2 )TiO 3 (SBT) ceramics were all below 1 μm, 16 being much smaller compared to undoped SBT ceramics with an average grain size of 5.6 μm. 17 The fine grain size is one of the reasons responsible for the high Weibull characteristic BDS of the above ceramics with values well above 400 kV/cm. 16 In addition to the dielectric constant and BDS, the dielectric loss is also important for energy storage capability of dielectrics, which is related to the hysteresis of the P−E loop.…”
Section: Introductionmentioning
confidence: 98%