Wideband Doherty Power Amplifier: A Design Approach

Rubio, Jorge Julián Moreno; Malaver, Edison Ferney Angarita; González, Luis Ángel Lara

doi:10.3390/mi13040497

Cited by 8 publications

(4 citation statements)

References 18 publications

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“…Asymmetric architectures, as illustrated in the literature [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 ], have improved the traditional Doherty power amplifier structure to enhance its power back-off range. The auxiliary amplifier, compared with the main amplifier, has a higher saturated output power, achieving a power back-off range of approximately 7–8 dB.…”

Section: Introductionmentioning

confidence: 99%

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

Li,

Ge,

Liang

et al. 2024

Micromachines

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This paper introduces the structure and characteristics of an internal-matching high-power Doherty power amplifier based on GaN HEMT devices with 0.25 μm process platforms from the Nanjing Electronic Devices Institute. Through parameter extraction and load-pull testing of the model transistor, an EE_HEMT model for the 1.2 mm gate-width GaN HEMT device was established. This model serves as the foundation for designing a high-power three-stage Doherty power amplifier. The amplifier achieved a saturated power gain exceeding 9 dB in continuous wave mode, with a saturated power output of 49.7 dBm. The drain efficiency was greater than 65% at 2.6 GHz. At 9 dB power back-off point, corresponding to an output power of 40.5 dBm, the drain efficiency remained above 55%. The performance of the amplifier remains consistent within the 2.55–2.62 GHz frequency range. The measured power, efficiency, and gain of the designed Doherty power amplifier align closely with the simulation results based on the EE_HEMT model, validating the accuracy of the established model. Furthermore, the in-band matching design reduces the size and weight of the amplifier. The amplifier maintains normal operation even after high and low-temperature testing, demonstrating its reliability. In conjunction with DPD (digital pre-distortion) for the modulated signal test, the amplifier exhibits extremely high linearity (ACLR < −50.93 dBc). This Doherty power amplifier holds potential applications in modern wireless communication scenarios.

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Section: Introductionmentioning

confidence: 99%

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

Li,

Ge,

Liang

et al. 2024

Micromachines

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“…Reference source not found.. The harmonics has been controlled with one frequency point, which do not consider the broadband in reference [21]. As a result, the power loss minimization for fundamental frequency is critical in harmonic control network [22].…”

Section: ⅰ Introductionmentioning

confidence: 99%

A High Efficiency Harmonic Control GaN Power Amplifier

Lin,

Lu,

Zhao

et al. 2023

Preprint

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In order to meet the requirements of the high efficiency for the wireless communication system, this paper introduces a high efficiency power amplifier (PA) based on the harmonic control technique. Compared with other works, this method can realize the second and third-harmonic impedance matching accurately. Besides, to avoid the problem of transmission line with high characteristic impedance in bias network, the π-typed and L-typed structure is utilized. For demonstration, a high efficient PA using CGH40010 GaN HEMT is designed and fabricated. The measured results show that it obtained an output power (Pout) of 39.5 ± 1 dBm, a Gain of 14.5 ± 1 dB, a maximum drain efficiency (DE) of 74.6% within the frequency range of 0.3–1.75 GHz. After comparison, this PA is superior in terms of efficiency and gain and has predominant engineer application.

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“…A radio frequency (RF) amplifier is a key component of the RF front-end [ 1 , 2 ], which has been widely used in various radio systems [ 3 ], such as navigation systems [ 4 ], radar [ 5 , 6 ] and satellite communication systems [ 7 ], mobile communication systems [ 8 ], positioning systems [ 9 ], etc. Due to different application scenarios and requirements, the above radio systems usually need to work in various environments.…”

Section: Introductionmentioning

confidence: 99%

Modeling of Key Specifications for RF Amplifiers Using the Extreme Learning Machine

2022

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The amplifier is a key component of the radio frequency (RF) front-end, and its specifications directly determine the performance of the system in which it is located. Unfortunately, amplifiers’ specifications degrade with temperature and even lead to system failure. To study how the system failure is affected by the amplifier specification degradation, it is necessary to couple the amplifier specification degradation into the system optimization design. Furthermore, to couple the amplifier specification degradation into the optimal design of the system, it is necessary to model the characteristics of the amplifier specification change with temperature. In this paper, the temperature characteristics of two amplifiers are modeled using an extreme learning machine (ELM), and the results show that the model agrees well with the measurement results and can effectively reduce measurement time and cost.

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Wideband Doherty Power Amplifier: A Design Approach

Cited by 8 publications

References 18 publications

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model

A High Efficiency Harmonic Control GaN Power Amplifier

Modeling of Key Specifications for RF Amplifiers Using the Extreme Learning Machine

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