Wideband local mean estimation

Kurt, Tolga; Helloco, Yann Le; Breton, B.

doi:10.1049/el:20063778

Cited by 2 publications

(2 citation statements)

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“…The switch is designed to meet the power handling ͑Ͼ2 W͒ and frequency requirements of cellular communications systems and has been proven to 1 ϫ 10 8 cycles. 28 At room temperature, the RFMD switches required actuation voltages between approximately 60 to 120 V, while the NEU switches required approximately 60-80 V. ͑Actuation levels above 100 V causes the actuation lines to evaporate for the NEU switches.͒ Actuation voltage for cantilever beam switches are generally higher than those of capacitive switches, 29 which follows from the design parameters of the switches. 25 Based on the actuation voltages employed for the present experiments, the room temperature contact forces were estimated to be on the order of 70-100 N. 30 During the cooling process, the strain gradient in the switch cantilevers changed, resulting in an increase in the actuation voltages required to close the switches.…”

Section: Methodsmentioning

confidence: 99%

“…30 Previous measurements showed how temperature affects the actuation voltage for two-fixed end switches. 21,29 The experimental setup ͑Fig. 3͒ consisted of an adaptation of a setup described earlier by Brown et al 16 whereby the 20-pin electrical feedthrough was replaced with a 32-pin electrical feedthrough that supported a 24-pin ceramic dual inline package and a platinum resistance thermometer.…”

Section: ͒mentioning

confidence: 99%

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Contact voltage-induced softening of RF microelectromechanical system gold-on-gold contacts at cryogenic temperatures

Berman

Walker

Krim

2010

Journal of Applied Physics

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A series of experiments were performed in vacuum environments to investigate the impact of rf micromechanical system switch contact voltage versus resistance for gold-on-gold contacts at cryogenic temperatures. The purpose of this work was twofold as follows: ͑1͒ to examine whether asperity heating models already validated for high temperature contacts were also applicable at cryogenic temperatures and ͑2͒ to explore the implications and validity of prior suggestions that contact temperatures between 338 and 373 K are high enough to dissociate adsorbed film and/or push them aside but low enough to prevent asperities from becoming soft and adherent. Measurements on two distinct switch types, fabricated at independent laboratories, were performed in the temperature range 79-293 K and for contact voltages ranging from 0.01 to 0.13 V. Contact resistance values at all temperatures were observed to be lower for higher contact voltages, consistent with the aforementioned asperity heating models, whereby increased contact currents are associated with increased heating and softening effects. In situ removal of adsorbed species by oxygen plasma cleaning resulted in switch adhesive failure. Switches that had not been cleaned meanwhile exhibited distinct reductions in resistance at contact temperatures close to 338 K, consistent with suggestions that films begin to desorb, disassociate, and/or be pushed aside at that temperature.

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Section: Methodsmentioning

confidence: 99%