2021
DOI: 10.3390/en14154430
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors

Abstract: The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model of the converter is reduced to obtain one lumped inductance of the input filter … Show more

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Cited by 3 publications
(2 citation statements)
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“…Nevertheless, the approaches to testing simulation models of converter systems are very diverse-depending on the purpose of the research. An example may be the work devoted to modeling the DC/DC converter, also using GaN devices [32].…”
Section: Simulation Studies Of the Pvs Modelmentioning
confidence: 99%
“…Nevertheless, the approaches to testing simulation models of converter systems are very diverse-depending on the purpose of the research. An example may be the work devoted to modeling the DC/DC converter, also using GaN devices [32].…”
Section: Simulation Studies Of the Pvs Modelmentioning
confidence: 99%
“…There is a basic family of non-isolated converters, usually called the second-order converters. The family is comprised of the buck, boost, and buck-boost converters [1][2][3][4][5][6][7][8][9][10][11][12]. Figure 1 shows the basic family of second-order converters.…”
Section: Introductionmentioning
confidence: 99%