A 30-GHz amplifier has been successfully designed and measured using TSMC standard 0.18-m CMOS process. Through accurate device model and full-wave EM simulation including transmission lines, MIM capacitors, and pads, the frequency response of LNA can be precisely expected. To the author's best knowledge, this LNA achieved the best performances among the previous works concerning in operating frequency, gain, IP 1 dB , IP3, and noise figure. This work proves the standard CMOS process has great potential for millimeter-wave applications. A 24-GHz 3.9-dB NF low-noise amplifier using 0.18-m CMOS technology, IEEE Microwave Wireless Compon Lett 15 (2005), 448 -450. 2. X. Guan and A. Hajimiri, A 24-GHz CMOS front end, IEEE J Solid-ABSTRACT: The design and development of a broadband dual-polarized 16 ϫ 16 element microstrip antenna array for X-band application is introduced. The measured bandwidth is about 17.8% for voltage standing wave ratios Ͻ1.5. The polarization isolation is better than 45 dB. The cross-polarization component is at the level of Ϫ37 dB below the main lobe.ABSTRACT: A correction factor dependent upon frequency, type of phantom, and incident polarization, which should be applied to the mea-sured specific absorption rate is proposed for homogeneous phantoms. It is shown for an application of occupational exposure in the neighborhood of a base station antenna that this correction factor not underestimates realistic exposure of workers.