2021
DOI: 10.2478/jee-2021-0045
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Wideband ring mixer for band #1 of MB-OFDM systems in 180 nm CMOS technology

Abstract: A wideband down conversion ring mixer is proposed for multi band orthogonal frequency division multiplexing (MB-OFDM) system in 180 nm CMOS technology. The mixer is essentially used in a heterodyne wireless receiver to enhance the selectivity of the system. Being a nonlinear system, the mixer dominates the overall performance of the system. The design of down conversion mixer is the most challenging part of a receive chain. Wideband impedance matching always remains a challenge in any radio frequency integrate… Show more

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Cited by 3 publications
(3 citation statements)
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“…The most attractive application for the designed antenna can be seen at RF energy harvesting and short range communication. These multiband antennas are also used in MIMO and OFDM [23,24]. The gain of these antenna should be precisely large so that the reduction in power requirements would ultimately increase the battery life.…”
Section: Introductionmentioning
confidence: 99%
“…The most attractive application for the designed antenna can be seen at RF energy harvesting and short range communication. These multiband antennas are also used in MIMO and OFDM [23,24]. The gain of these antenna should be precisely large so that the reduction in power requirements would ultimately increase the battery life.…”
Section: Introductionmentioning
confidence: 99%
“…A receiving circuit that can function at low voltage for energy harvesting and has a compact area is required for receiver systems [1]. In many different applications, including environment monitoring, farm settings, health monitoring, and wireless networks are highly demanded [2]. The supply voltage need is falling as technology results in small feature size.…”
Section: Introductionmentioning
confidence: 99%
“…Since the LNA characteristics have tradeoffs, the total F M should be high. One method to increase the LNA parameters is the distributed amplifier [4], which consists of MOS linked in a cascade arrangement with a gain of 2 , where g m is the MOS transconductance, R L is the load, and N is the total number of MOS stages. Although it benefits from high gains, it also suffers from greater losses, high NF, and a wide area.…”
Section: Introductionmentioning
confidence: 99%