Wideband SiGe BiCMOS transimpedance amplifier for 20 Gb/s optical links

Song, Qinggong; Mao, Luhong; Xie, Sheng

doi:10.1587/elex.12.20150419

Cited by 10 publications

(2 citation statements)

References 12 publications

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“…Another way of bandwidth extension is the inductor peaking technique [27,28], which is usually used in the collector or drain of an input transistor. The use of a planar inductor significantly complicates the layout design and increases the overall chip size.…”

Section: Optical Receiver With Integrated Photodiode and Transimpedanmentioning

confidence: 99%

Microwave Photonic ICs for 25 Gb/s Optical Link Based on SiGe BiCMOS Technology

et al. 2019

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The design, simulation and experimental results of the integrated optical and electronic components for 25 Gb/s microwave photonic link based on a 0.25 µm SiGe:C BiCMOS technology process are presented. A symmetrical depletion-type Mach-Zehnder modulator (MZM) and driver amplifier are intended for electro-optical (E/O) integrated transmitters. The optical divider and combiner of MZM are designed based on the self-imaging theory and then simulated with EM software. In order to verify the correctness of the theory and material properties used in the simulation, a short test (prototype) MZM of 1.9 mm length is produced and measured. It shows an extinction ratio of 19 dB and half-wave voltage-length product of Vπ ∙ L = ~1.5 V·cm. Based on these results, the construction of the segmented modulator with several driver amplifier units is defined. The designed driver amplifier unit provides a bandwidth of more than 30 GHz, saturated output power of 6 dBm (output voltage of Vpp = 1.26 V), and matching better than −15 dB up to 35 GHz; it dissipates 170 mW of power and occupies an area of 0.4 × 0.38 mm2. The optical-electrical (O/E) receiver consists of a Ge-photodiode, transimpedance amplifier (TIA), and passive optical structures that are integrated on a single chip. The measured O/E 3 dB analog bandwidth of the integrated receiver is 22 GHz, and output matching is better than −15 dB up to 30 GHz, which makes the receiver suitable for 25 Gb/s links with intensity modulation. The receiver operates at 1.55 μm wavelength, uses 2.5 V and 3.3 V power supplies, dissipates 160 mW of power, and occupies an area of 1.46 × 0.85 mm2.

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Section: Optical Receiver With Integrated Photodiode and Transimpedanmentioning

confidence: 99%

Microwave Photonic ICs for 25 Gb/s Optical Link Based on SiGe BiCMOS Technology

et al. 2019

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show abstract

“…For high-speed TIA, achieving maximum bit rates requires a flat response of the magnitude of the transimpedance within the frequency range of interest. The use of networks, such as T-coil peaking, shunt-series peaking, shunt-peaking, and π-type peaking, have been reported to increase the bandwidth and remove the passband ripple [15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30]. However, the bondwire inductance and the parasitic capacitance of the PD vary from chip to chip in engineering applications; thus, the TIA should be designed to be robust to these variations.…”

Section: Introductionmentioning

confidence: 99%