Widely Adjusting the Breakdown Voltages of Kilo-Voltage Thin Film Transistors

Li, Xiaojie; Liu, Chuan; Kong, Jiaquan; Ou, Hai; She, Juncong; Deng, Shaozhi; Chen, Jun

doi:10.1109/led.2021.3137355

Cited by 6 publications

(1 citation statement)

References 28 publications

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“…Chow, et al, fabricated rectangular a-Si HVTFT to operate voltage above 300 V with an offset of 6 µm [25]. Li, et al, reported a-IGZO HVTFT with a high breakdown voltage of over 1.1 kV [26] and over 1.9 kV [27]. The results in the literature show that breakdown voltage can be improved if the drain offset structure is used.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Offset Corbino Thin Film Transistor: A Physical Model

Kong

Liu

et al. 2023

Electronics

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Offset Corbino thin film transistor is a good candidate for high voltage thin film transistor (HVTFT) due to the uniform drain electric field distribution benefiting from the circular structure. The physical model of offset Corbino thin film transistor characteristics has yet to be clarified. In this study, Equations are derived to describe the current–voltage relations of Corbino TFT with offset at the drain or source sides. The influence of offset position and parameters on the saturation voltage and the saturation current was described quantitatively. Three-dimensional Computer-Aided Design simulation and experiment results verify the theoretical physical model. Our physical model provides design rules for high voltage offset Corbino TFT when considering the voltage tolerance and saturation current balance.

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Section: Introductionmentioning

confidence: 99%

Characteristics of Offset Corbino Thin Film Transistor: A Physical Model

Kong

Liu

et al. 2023

Electronics

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Applications of Oxide Thin Film Transistors

2024

Oxide Thin Film Transistors

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A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer

Huang,

Zhang,

Yao

et al. 2024

Applied Physics Letters

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This work presents a normally off high-voltage indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) featuring a drain offset region modulated by the IZO layer (IMO, IMO-IGZO TFT). In addition to decreasing the specific on-resistance (Ron,sp) by more than three orders of magnitude, the IMO structure further elevates the breakdown voltage by optimizing the thickness of the IZO layer (tIZO) compared to the Offset TFT. Through TCAD simulation, the underlying mechanism responsible for the improved performance of the IMO-IGZO TFT is elucidated. The introduced IZO modulating layer effectively increases carrier concentration and rebuilds the electric field within the offset region. Consequently, the IMO-IGZO TFT with a 6 nm thick IZO modulating layer and 3.5 μm length offset region attains a breakdown voltage of 410 V and demonstrates favorable Ron,sp of 5.3 × 103 mΩ × cm2. This results in a Baliga's figure of merit of 31.72 kW/cm2, surpassing conventional and Offset TFTs by factors of 186 and 3048, respectively.

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Widely Adjusting the Breakdown Voltages of Kilo-Voltage Thin Film Transistors

Cited by 6 publications

References 28 publications

Characteristics of Offset Corbino Thin Film Transistor: A Physical Model

Characteristics of Offset Corbino Thin Film Transistor: A Physical Model

Applications of Oxide Thin Film Transistors

A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer

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