Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode

Muscato, Orazio

doi:10.1007/s10825-021-01734-3

Cited by 4 publications

(1 citation statement)

References 27 publications

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“…For non-trivial interaction mechanisms a closure problem exists in the Wigner formalism [78, p 98]. Other very recent advances of Wigner function methods for electronics (and photonics, but not further discussed here) can be found in a recent special issue [103] and cover, among others, handling of boundary conditions [104][105][106] and modelling and solution approaches [107][108][109][110][111][112][113].…”

Section: Wigner Functionmentioning

confidence: 99%

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Weinbub

Kosik

2022

J. Phys.: Condens. Matter

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Quantum electronics has significantly evolved over the last decades. Where initially the clear focus was on light-matter interactions, nowadays approaches based on the electron's wave nature have solidified themselves as additional focus areas. This development is largely driven by continuous advances in electron quantum optics, electron based quantum information processing, electronic materials, and nanoelectronic devices and systems. The pace of research in all of these areas is astonishing and is accompanied by substantial theoretical and experimental advancements. What is particularly exciting is the fact that the computational methods, together with broadly available large-scale computing resources, have matured to such a degree so as to be essential enabling technologies themselves. These methods allow to predict, analyze, and design not only individual physical processes but also entire devices and systems, which would otherwise be very challenging or sometimes even out of reach with conventional experimental capabilities. This review is thus a testament to the increasingly towering importance of computational methods for advancing the expanding field of quantum electronics. To that end, computational aspects of a representative selection of recent research in quantum electronics are highlighted where a major focus is on the electron's wave nature. By categorizing the research into concrete technological applications, researchers and engineers will be able to use this review as a source for inspiration regarding problem-specific computational methods.

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Section: Wigner Functionmentioning

confidence: 99%

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Weinbub

Kosik

2022

J. Phys.: Condens. Matter

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On the validity of the Fourier law in a Resonant Tunneling Diode

Muscato

2023

Ricerche mat

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Optimized quantum drift diffusion model for a resonant tunneling diode

Muscato,

Nastasi,

Romano

et al. 2024

Journal of Non-Equilibrium Thermodynamics

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The main aim of this work is to optimize a Quantum Drift Diffusion model (QDD) (V. Romano, M. Torrisi, and R. Tracinà, “Approximate solutions to the quantum drift-diffusion model of semiconductors,” J. Math. Phys., vol. 48, p. 023501, 2007; A. El Ayyadi and A. Jüngel, “Semiconductor simulations using a coupled quantum drift-diffusion schrödinger-Poisson model,” SIAM J. Appl. Math., vol. 66, no. 2, pp. 554–572, 2005; L. Barletti and C. Cintolesi, “Derivation of isothermal quantum fluid equations with Fermi-Dirac and bose-einstein statistics,” J. Stat. Phys., vol. 148, pp. 353–386, 2012) by comparing it with the Boltzmann-Wigner Transport Equation (BWTE) (O. Muscato, “Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode,” J. Comput. Electron., vol. 20, pp. 2062–2069, 2021) solved using a signed Monte Carlo method (M. Nedjalkov, H. Kosina, S. Selberherr, C. Ringhofer, and D. K. Ferry, “Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices,” Phys. Rev. B, vol. 70, pp. 115–319, 2004). A situation of high non equilibrium regime is investigated: electron transport in a Resonant Tunneling Diode (RTD) made of GaAs with two potential barriers in GaAlAs. The range of the suitable voltage bias applied to the RTD is analyzed. We find an acceptable agreement between QDD model and BWTE when the applied bias is low or moderate with a threshold of about 0.225 V over a length of 150 nm; it is found out that the use of a field dependent mobility is crucial for getting a good description of the negative differential conductivity in such a range. At higher bias voltages, we expect that QDD model loses accuracy.

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Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode

Cited by 4 publications

References 27 publications

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems

On the validity of the Fourier law in a Resonant Tunneling Diode

Optimized quantum drift diffusion model for a resonant tunneling diode

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