Wigner Function for Open Systems with Electron–Phonon Interaction

Bordone, Paolo; Abramo, A.; Brunetti, Rossella; Pascoli, M.; Jacoboni, Carlo

doi:10.1002/1521-3951(199711)204:1<303::aid-pssb303>3.0.co;2-i

Cited by 6 publications

(4 citation statements)

References 4 publications

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“…An integral equation for this function can be written [3] and applied to study quantum electron transport in presence of scattering in an open system occupaying a finite region inside given boundaries [4]. The problem is not trivial owing to the nonlocality of the interaction and to the presence of integrations over the space coordinates into the general equation for the WF.…”

Section: Theoretical Approachsupporting

confidence: 88%

See 1 more Smart Citation

Quantum Electron-Phonon Interaction for Transport in Open Nanostructures

Bordone¹,

Brunetti²,

Pascoli³

et al. 1998

Simulation of Semiconductor Processes and Devices 1998

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Section: Theoretical Approachsupporting

confidence: 88%

“…Space correlations for the evaluation of the coefficients in Eq. (2) have been considered up to 40 nm [4].…”

Section: Iurp) = Jdr'e-^'ir+^imlt-^)mentioning

confidence: 99%

Quantum Electron-Phonon Interaction for Transport in Open Nanostructures

Bordone¹,

Brunetti²,

Pascoli³

et al. 1998

Simulation of Semiconductor Processes and Devices 1998

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“…. , N p , (22) with p = (p max − p min )/N p = 2p max /N p . Please note, that if the numerical integration of ( 6) is performed using a uniform grid with points along x separated by ξ (which can be chosen independently of x ), the Fourier completeness relation results in the limitation for p max , namely p max = π / ξ [49].…”

Section: Methodsmentioning

confidence: 99%

“…However, in the case of solid systems this approach is limited to simple semiconductor nanodevices because of the required computational resources and problems with stability of the algorithms [15][16][17]. More effective techniques of solving the Wigner equation are based on the Monte Carlo method [18][19][20][21]: the authors of [22][23][24] developed and applied this method to determine the current-voltage characteristics of the resonant-tunnelling diodes (RTDs) including electronphonon interaction. Another effective procedure of numerical solution of the Wigner equation is based on its conversion into integral form and finding the solution in the form of Born-von Neumann series.…”

Section: Introductionmentioning

confidence: 99%

Phase-space description of wave packet approach to electronic transport in nanoscale systems

Szydłowski¹,

Wołoszyn²,

Spisak³

2013

Semicond. Sci. Technol.

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The dynamics of conduction electrons in resonant tunnelling nanosystems is studied within the phase-space approach based on the Wigner distribution function. The time evolution of the distribution function is calculated from the time-dependent quantum kinetic equation for which an effective numerical method is presented. Calculations of the transport properties of a double-barrier resonant tunnelling diode are performed to illustrate the proposed techniques. Additionally, analysis of the transient effects in the nanosystem is carried out and it is shown that for some range of the bias voltage the temporal variations of electronic current can take negative values. The explanation of this effect is based on the analysis of the time changes of the Wigner distribution function. The decay time of the temporal current oscillations in the nanosystem as a function of the bias voltage is determined.

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Quantum effects in the simulation of conventional devices

Abramo

Fiegna

Casarini

1998

Simulation of Semiconductor Processes and Devices 1998

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It is widely known that a fundamental role in the evolution of modern solid-state devices is played by scaling theories. The constant increase of the circuit complexity, the reduction of their dimensions and power consumption, in fact, is made possible mainly due to device shrinking. Of course, this progress wouldn't have happened without the parallel evolution of semiconductor technologies, which, in turn, probably wouldn't have progressed this much if the performance limits of MOS transistors had been reached sooner. Therefore, it is important to understand and try to predict these limits, possibly to avoid them circumventing their origin, ultimately to delay as much as possible the need of a different technology. To this purpose, from the theoretical side it is important to identify the correct physical frame in which investigations have to be performed, with the aim of bridging the gap between experiments and models, and, in essence, to be confident on the prediction ability of the simulation tools. In this paper we focus our attention on the modeling of quantum effects in MOS transistors, presenting some recent applications concerning quantum effects in MOSFETs.

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Wigner Function for Open Systems with Electron–Phonon Interaction

Cited by 6 publications

References 4 publications

Quantum Electron-Phonon Interaction for Transport in Open Nanostructures

Quantum Electron-Phonon Interaction for Transport in Open Nanostructures

Phase-space description of wave packet approach to electronic transport in nanoscale systems

Quantum effects in the simulation of conventional devices

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