Window-assisted nanosphere lithography for vacuum micro-nano-electronics

Li, Nannan; Pang, Shucai; Yan, Fei; Chen, Lei; Jin, Dingfeng; Xiang, Wei; De, Zhang; Zhang, Baoqing

doi:10.1063/1.4916973

Cited by 5 publications

(2 citation statements)

References 47 publications

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“…The direct electron‐beam lithography (EBL) [ 54 ] could enable coplanar geometrically asymmetric nanostructure but compromise significant limitations in terms of low‐throughput, poor scalability to large area and rough boundaries. Here, a novel fabrication process developed from our reported technique [ 55–57 ] is demonstrated to fabricate coplanar asymmetric tip‐to‐edge metal nanostructure with sub‐10 nm air channel and different tip‐to‐edge height. Figure S2, Supporting Information presents step‐by‐step fabrication details.…”

Section: Resultsmentioning

confidence: 99%

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Li¹,

Zhang²,

He³

et al. 2021

Advanced Materials

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The tradeoff between ultrahigh speed and low power is a dominant challenge in continuously improving modern electronics. Fundamental electronic devices with ultrafast response are highly desired in low‐power electronics. However, conventional semiconductor electronic devices now near the speed limit from the physical roadblocks including short‐channel effect, restricted carrier velocity, and heat death. Currently emerging electronic devices also face formidable difficulties to achieve high‐speed performance at low operating voltage without heat disturbance. Here, a novel fabricated coplanar tip‐to‐edge semiconductor‐free nanostructure with asymmetric sub‐10 nm air channel is reported, stimulating electric‐field accelerated scattering‐free transport of electrons and resulting in ultrafast response of record sub‐picoseconds at a low turn‐on voltage around 0.7 V. Simulation results show a typical electrical response down to 64 fs, which is ≈103 times faster than that of conventional semiconductor electronic devices. The coplanar asymmetric nanostructure allows a high rectifying ratio up to 106 which is superior to that of the most promising 2D semiconducting nanodiodes. In addition, heat death is overcome due to the inherent advantages from the novel nanostructure and underlying working mechanism. The intriguing nanodiodes will attract broadly interests in electronics due to their potential as rudimentary building blocks in ultrafast electronic integrated circuits.

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Section: Resultsmentioning

confidence: 99%

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Li¹,

Zhang²,

He³

et al. 2021

Advanced Materials

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“…Monodisperse suspensions of polystyrene (PS) nanospheres (NSs) deposited on a substrate form colloidal crystals consisting in single or multiple layers, exhibiting hexagonal close-packed (HCP) symmetry. In the last decades, NSL gained increasing attention in nanotechnology due to the possibility to realise several periodic patterns over large area and at reasonable cost, including photonic structures [2] or devices for nanoelectronics [3] and plasmonics [4]. However, the SA process exhibits intrinsic variability, resulting in the generation of lattice defects and the formation of multiple domains.…”

Section: Introductionmentioning

confidence: 99%

Directed Self-Assembly of Polystyrene Nanospheres by Direct Laser-Writing Lithography

et al. 2020

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In this work, we performed a systematic study on the effect of the geometry of pre-patterned templates and spin-coating conditions on the self-assembling process of colloidal nanospheres. To achieve this goal, large-scale templates, with different size and shape, were generated by direct laser-writer lithography over square millimetre areas. When deposited over patterned templates, the ordering dynamics of the self-assembled nanospheres exhibits an inverse trend with respect to that observed for the maximisation of the correlation length ξ on a flat surface. Furthermore, the self-assembly process was found to be strongly dependent on the height (H) of the template sidewalls. In particular, we observed that, when H is 0.6 times the nanospheres diameter and spinning speed 2500 rpm, the formation of a confined and well ordered monolayer is promoted. To unveil the defects generation inside the templates, a systematic assessment of the directed self-assembly quality was performed by a novel method based on Delaunay triangulation. As a result of this study, we found that, in the best deposition conditions, the self-assembly process leads to well-ordered monolayer that extended for tens of micrometres within the linear templates, where 96.2% of them is aligned with the template sidewalls.

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Sub-10 nm Nanogap Arrays for the Next-Generation Electronics

Zhang

Liu

et al. 2021

2021 IEEE 4th International Conference on Electronics Technology (ICET)

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Window-assisted nanosphere lithography for vacuum micro-nano-electronics

Cited by 5 publications

References 47 publications

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Directed Self-Assembly of Polystyrene Nanospheres by Direct Laser-Writing Lithography

Sub-10 nm Nanogap Arrays for the Next-Generation Electronics

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