Wire bonding power interconnection

Novotný, Marek; Jankovsky, J.; Szendiuch, Ivan; Barton, Z.

doi:10.1109/estc.2008.4684379

Cited by 3 publications

(1 citation statement)

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“…But others can be further explored, such as the optimized surface between interconnection elements and chip devices. We noted that some studies [16] [17] still use DC to stress the bonded wires or the whole packaged chip. But our study reveals that an AC do not produce exactly the same temperature dispatching and values as DC.…”

Section: Discussionmentioning

confidence: 99%

Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes

Medjahed

Vidal

Nogarède

2012

Microelectronics Reliability

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International audienceToday, power electronic reliability is a main subject of interest for many companies and laboratories. The main process leading to the IGBT failure is the cycling thermal stress. Indeed the current ﬂow induce local heating and then mechanical stress. This paper deals with electro thermal stress under steady and transient current states. The main objective is to test bonded wires with active current cycle. Consequently, the thermo mechanical stress is obtained. A numerical 3D ﬁnite element model is presented and some experimental results are given. Indeed an infrared system monitors the temperature dispatching from an experimental test bench under active current cycle. The overall study is a ﬁrst step before a global simulation (electrical thermal-mechanical) in order to optimize some geometric parameters of the packaging

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Section: Discussionmentioning

confidence: 99%