Wireless photoelectrochemical mechanical polishing for inert compound semiconductor wafers

Qiao, Liqing; Ou, Liwei; Shi, Kang

doi:10.1016/j.jmapro.2023.01.039

Cited by 6 publications

(4 citation statements)

References 36 publications

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“…Equations ( 1)- (5) show that the concentration of H 2 O 2 and Fe 2+ , as well as the pH value of the solution, are primary factors determining the reaction rate [24]. Therefore, the optimal design based on BBD method was carried out with the above three factors, the mathematical model was established with the decolorization rate of methyl orange as the response value.…”

Section: Experimental Design and Characterization 231 Bbd Experimenta...mentioning

confidence: 99%

“…For the realization of GaN-based applications, an ultra-flat and damage-free wafer surface is essential. Chemical mechanical polishing (CMP) has been widely used as a global planarization technique in GaN wafer fabrication processes [5]. However, GaN wafers are distinctively characterized by high hardness, brittleness and stable chemical properties, which makes the conventional CMP technique inevitably suffer from low material removal rate (MRR) [6].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of cluster magnetorheological electro-Fenton composite polishing process for single-crystal GaN wafer based on BBD experimental method

Zheng,

Wu,

Pan

et al. 2024

Smart Mater. Struct.

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A cluster magnetorheological (MR) electro-Fenton composite polishing technique was proposed in this work, which can realize high efficiency, ultra-smooth and damage-free of GaN wafer by the synergistic effect of electro-Fenton reaction and flexible mechanical removal of MR polishing. The key parameters of electro-Fenton were optimized through methyl orange degradation experiments based on experimental BBD method. The results showed that the decolorization rate had a strong dependence on H2O2 concentration, Fe-C concentration and pH value, where the decolorization rate had the maximum value when the H2O2 concentration of 5 wt%, Fe-C concentration of 3 wt% and pH value of 3. Compared with the Fenton reaction, the decolorization and REDOX potential of methyl orange solution were significantly improved in the electro-Fenton reaction. Furthermore, the process parameters of the cluster MR electro-Fenton composite polishing were optimized to obtain the best polishing result, which was realized under the conditions of 3 wt% diamond (grain size: 0.5 µm), a polishing gap of 0.9 mm and a polishing time of 60 min. The novel method achieved a material removal rate (MRR) of 10.79 μm/h, which was much higher than that of the conventional technique. In addition, an ultra-smooth and damage-free surface with a roughness of 1.29 nm Ra was obtained.

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Section: Experimental Design and Characterization 231 Bbd Experimenta...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of cluster magnetorheological electro-Fenton composite polishing process for single-crystal GaN wafer based on BBD experimental method

Zheng,

Wu,

Pan

et al. 2024

Smart Mater. Struct.

View full text Add to dashboard Cite

show abstract

“…Recently, photoelectrochemical (PEC) oxidation-assisted polishing methods, such as PEC mechanical polishing (PECMP) [16][17][18] and PEC-CARE, 19 have been developed to enhance the removal rate of GaN wafer polishing. Oxidized surfaces are more quickly processed with abrasives in CMP and are also more quickly etched by the CARE hydrolysis reaction.…”

mentioning

confidence: 99%

“…Moreover, PEC oxidation-based polishing methods have a low environmental impact due to the absence of strong chemicals in the working fluid. Recent studies show that GaN polishing methods using PECMP and PEC-CARE form a step-and-terrace structure on the polished surface, 16,17,19 indicating the achievement of highprecision and atomistic smoothing. This mechanism is considered a type of step flow.…”

mentioning

confidence: 99%

Role of Photoelectrochemical Oxidation in Enabling High-Efficiency Polishing of Gallium Nitride

Kayao,

Toh,

Yamauchi

et al. 2023

ECS J. Solid State Sci. Technol.

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Photoelectrochemical (PEC) oxidation is currently employed to improve the removal rates of surface polishing methods applied to gallium nitride (GaN) wafers, such as PEC mechanical polishing (PECMP) and PEC catalyst-referred etching (PEC-CARE). The use of PEC along with these methods has successfully achieved removal rates as high as 1 μm/h while still ensuring the highly ordered step-and-terrace structures generated by the same methods when PEC-oxidation is not employed. However, the atomic-scale phenomena induced by PEC oxidation to assist the polishing process of GaN surfaces remain unclear. To address such a question, this study investigates the role of PEC oxidation during CARE as an example. The results demonstrate that PEC oxidation selectively occurs at the step edge and advances through the GaN (0001) surface laterally rather than in the depth direction, thus enabling high-speed polishing and resulting in a highly ordered surface, both crystallographically and geometrically.

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Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

Zhao,

Wang,

Liu

et al. 2024

Adv Materials Inter

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As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes. Chemical mechanical polishing (CMP) technique of GaN is commonly one of the most effective ways to achieve atomically smooth surfaces. However, the current process is difficult to meet the needs of industrial development due to the characteristics of low material removal rate. Assisted enhanced CMP technique is deemed to possess significant potential due to its improved processing efficiency and surface topography quality. Herein, a variety of auxiliary enhanced CMP systems are designed and studied. In this review, recent advances both in conventional and assisted enhanced CMP of GaN are comprehensive presented, with a focus on their potential applications in various fields. The mechanism and design strategy of the process are discussed and summarized. The key issues in machining atomically flattened surface are outlined, and future strategies for sustainable development are also proposed. This review provides a novel perspective on GaN processing and offers more inspiration for future research to realize its development and commercial application.

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Wireless photoelectrochemical mechanical polishing for inert compound semiconductor wafers

Cited by 6 publications

References 36 publications

Investigation of cluster magnetorheological electro-Fenton composite polishing process for single-crystal GaN wafer based on BBD experimental method

Investigation of cluster magnetorheological electro-Fenton composite polishing process for single-crystal GaN wafer based on BBD experimental method

Role of Photoelectrochemical Oxidation in Enabling High-Efficiency Polishing of Gallium Nitride

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

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