Wireless Transmission of IGBT Driver Control

Batard, Christophe; Andrieux, G.; Ginot, Nicolas; Mannah, Marc Anthony

doi:10.1109/apec.2009.4802825

Cited by 12 publications

(7 citation statements)

References 5 publications

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“…In order to improve design flexibility and miniaturize the devices, it is desirable to eliminate the cables used for transmitting control and sensor signals in power electronics devices. Radio is effective for replacing optical cables that are sensitive to vibration and temperature (2) (3) . Furthermore, since radio can be used with a spatial distance of some length, the insulation performance is expected to be improved compared with conventional insulating measures such as photocoupler (4) .…”

Section: Introductionmentioning

confidence: 99%

High-Speed and Low-Latency Transmission by Millimeter-Wave Digital Wireless System for Si-IGBT/SiC-MOSFET Driver Control

et al. 2023

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Wireless transmission of gate control signals is expected to improve insulation performance and design flexibility. This paper proposes high-speed and low-latency transmission by millimeter wave digital wireless system for Si-IGBT/SiC-MOSFET driver control. High-speed and low-latency transmission is realized by continuous transmission using the millimeter wave radio. Solutions for handling errors and reliability are also presented. The effectiveness of the proposed system is demonstrated by evaluating the transmission latency, the effect of wireless errors using a real-time simulator, and its connection to an actual inverter.

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Section: Introductionmentioning

confidence: 99%

High-Speed and Low-Latency Transmission by Millimeter-Wave Digital Wireless System for Si-IGBT/SiC-MOSFET Driver Control

et al. 2023

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“…However, the fibers are very sensitive to temperature and vibration, which is especially problematic in outdoor applications. Moreover, it is essential to avoid using electrical contacts as much as possible under unfavorable conditions, e.g., the presence of dust or water [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Insulated signal transmission system using planar resonant coupling technology for high voltage IGBT gate driver

Shinoda

Terada

2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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An insulated signal transmission system using planar resonant coupling technology has been developed for providing driving signal transmission to control power electronic equipment. The resonant coupling can reduce the unwanted leakage that prevents conventional wireless systems from being applied inside the equipment. Using planar resonant couplers, the system restricted propagation loss to -0.9 dB and return loss to -10.0 dB in a wide frequency range of 2.2-2.78 GHz. Additionally, the couplers showed highly reliable parasitic capacitance characteristics and partial discharge characteristics. The developed system demonstrated switching operation of 3.3 kV-1200 A insulated-gate bipolar transistors (IGBTs) without disturbances between the highpower switching IGBTs and the RF transceivers. I.978-1-4799-5776-7/14/$31.00 ©2014 IEEE

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“…The heterogeneous and monolithic integration within Silicon power transistors is still a great way to improve not only the transistor itself, but the whole power switch function in power converters [2], [3]. Although several integrated solutions for driver supplies or gate drivers are available, only a few solutions have been presented to date for the integration of the required isolation between the power switch and its external control driver [4], [5]. However, these solutions remain difficult to monolithically integrate within power transistors.…”

Section: Introductionmentioning

confidence: 99%

Integrated low power and high bandwidth optical isolator for monolithic power MOSFETs driver

Rouger

Crébier

Lesaint

2011

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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Abstract-An integrated solution for the galvanic isolation between power transistors and their control unit is presented in this paper. This solution is based on a monolithic integration of a photodetector within a power MOSFET without any modification of its fabrication process. This photoreceiver can be associated with a monolithic driver to drive high side switches. Exhaustive characteristics for several integrated photodetectors are presented and discussed: quantum efficiency, step response, small signal analysis and sensitivity to the High Voltage MOSFET's Drain. The results of this analysis are photoreceivers with a Full Width at Half Maximum above 300MHz and a responsivity above 0.15A/W at a wavelength of 500nm. This leads to an integrated low power and high bandwidth optical isolation.

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Wireless Transmission of IGBT Driver Control

Cited by 12 publications

References 5 publications

High-Speed and Low-Latency Transmission by Millimeter-Wave Digital Wireless System for Si-IGBT/SiC-MOSFET Driver Control

High-Speed and Low-Latency Transmission by Millimeter-Wave Digital Wireless System for Si-IGBT/SiC-MOSFET Driver Control

Insulated signal transmission system using planar resonant coupling technology for high voltage IGBT gate driver

Integrated low power and high bandwidth optical isolator for monolithic power MOSFETs driver

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