WO₃-NP-activated WS₂ layered heterostructures for efficient broadband (254 nm–940 nm) photodetection

Abstract

Broadband photodetection including deep UV using Si is technically challenging due to its negligible optical absorption at 254 nm and requires heterogeneous integration with very high bandgap photoactive materials. However,...

A synergistic heterojunction of SnS2/SnSSe nanosheets on GaN for advanced self-powered photodetectors

“…47 Meanwhile, the longer component ( τ 2 ) is associated with band-edge recombination of electrons at the lower level of the conduction band (CB) and valence band (VB), representing radiative pathways. 48 The persistence of short lifetime components at significantly increased percentages results in substantial decreases in the average lifetimes of SnS 2 /SnSSe compared to SnS 2 . This observation strongly suggests energetic or charge transfer, or both, from SnS 2 to SnSSe, which aligns with the PL quenching observed in the steady-state PL spectra shown in ESI,† Fig.…”