2018
DOI: 10.1587/elex.15.20180762
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Word line interference based data recovery technique for 3D NAND Flash

Abstract: When the NAND Flash memory is used beyond specific retention time, data stored in NAND Flash memory may not be read out correctly due to retention error. In this paper, a word line interference (WI) based data recovery technique is proposed to recover retention-failed data. By using WI, a large amount of electrons can be re-injected into retention-failed cells with one program operation. To improve recovery efficiency and recover retention error in a block, an iterated WI recovery algorithm which combines WI a… Show more

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Cited by 2 publications
(3 citation statements)
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“…In modern high density SSDs, the number of bits stored per storage unit is significantly increased, but the read/write performance and erase limitation have decreased [8,9,17]. Regarding this fact, Geoff et al [12] proposed initializing a fixed (small) part of SSD blocks as the SLC-mode to be the buffer of write data in TLC devices.…”
Section: Background and Related Workmentioning
confidence: 99%
See 1 more Smart Citation
“…In modern high density SSDs, the number of bits stored per storage unit is significantly increased, but the read/write performance and erase limitation have decreased [8,9,17]. Regarding this fact, Geoff et al [12] proposed initializing a fixed (small) part of SSD blocks as the SLC-mode to be the buffer of write data in TLC devices.…”
Section: Background and Related Workmentioning
confidence: 99%
“…To further cut down the per-unit price of SSDs, flash density increases to TLC (Triple-Level Cell) or even QLC (Quad-Level Cell) [4,5,6,7]. But, the decreases in endurance and read/write performance accompanying with the feature size shrinking are now becoming the issues to be reckoned with [8,9,10,11]. To boost the I/O performance of high density SSDs, Geoff et al [12] proposed initializing a fixed (small) part of SSD blocks as the SLC mode to be the buffer of write data.…”
Section: Introductionmentioning
confidence: 99%
“…However, the decrease in endurance and the increase in bit error rates accompanying with the feature size shrinking are now becoming the issues to be reckoned with [2,3,4]. Among the many noises that affect the endurance of flash memory, retention noise [5,6,7,8], program interference noise [9,10,11], program/erase cycling noise [12,13], and read disturb [14] are the most important types. Specially, read disturb is an unexpected phenomenon in NAND flash memory , where reading data from a flash page can impact the threshold voltages of other (unread) pages in the same block.…”
Section: Introductionmentioning
confidence: 99%