“…However, the decrease in endurance and the increase in bit error rates accompanying with the feature size shrinking are now becoming the issues to be reckoned with [2,3,4]. Among the many noises that affect the endurance of flash memory, retention noise [5,6,7,8], program interference noise [9,10,11], program/erase cycling noise [12,13], and read disturb [14] are the most important types. Specially, read disturb is an unexpected phenomenon in NAND flash memory , where reading data from a flash page can impact the threshold voltages of other (unread) pages in the same block.…”