2022
DOI: 10.1021/acsanm.2c00918
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Wrinkle-Free Graphene Films on Fluorinated Self-Assembled Monolayer-Modified Substrates for Enhancing the Electrical Performance of Transistors

Abstract: Self-assembled monolayer (SAM)-functionalized substrates are widely used for tailoring the electronic properties (i.e., p- and n-type doping) of two-dimensional materials, which might suppress the charge scattering, impurities, and wrinkles that can severely decline electrical properties. The fluorinated self-assembled monolayer (FSAM) is also used for promoting electrical properties by eliminating the small number of water molecules/residues between the substrate and graphene during the typical wet transfer p… Show more

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Cited by 3 publications
(4 citation statements)
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“…The I D /I G peak ratio (Figure 3a) of ∼0.04 indicates that the three transfer methods do not cause large defects in the graphene. 32 Furthermore, the correlation between the Raman frequencies of the G (ω G ) and 2D (ω 2D ) modes of various samples was employed to characterize the strain and doping effect on the transferred graphene (Figure 3b). 33 Figure 3b shows that the dry transfer methods (TRT and UV-RT) involve an R2R pressing process, which exerts a tensile strain on the graphene film.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The I D /I G peak ratio (Figure 3a) of ∼0.04 indicates that the three transfer methods do not cause large defects in the graphene. 32 Furthermore, the correlation between the Raman frequencies of the G (ω G ) and 2D (ω 2D ) modes of various samples was employed to characterize the strain and doping effect on the transferred graphene (Figure 3b). 33 Figure 3b shows that the dry transfer methods (TRT and UV-RT) involve an R2R pressing process, which exerts a tensile strain on the graphene film.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…To discuss the degree of defects and residues on graphene after the transfer process, Raman spectroscopy was used to analyze the above three kinds of samples. The I D / I G peak ratio (Figure a) of ∼0.04 indicates that the three transfer methods do not cause large defects in the graphene . Furthermore, the correlation between the Raman frequencies of the G (ω G ) and 2D (ω 2D ) modes of various samples was employed to characterize the strain and doping effect on the transferred graphene (Figure b) …”
Section: Results and Discussionmentioning
confidence: 99%
“…In 2022, He et al adopted a fluorinated-self-assembled-monolayer (FSAM)-modified SiO 2 /Si substrate by a dry-transfer process to achieve wrinkle-free graphene. 81 The lower surface energy of the FSAM allowed the wrinkled graphene to spread out under heat between graphene and the substrate, and thus wrinkle-free graphene was achieved (Fig. 22c).…”
Section: Contamination During Transfermentioning
confidence: 99%
“…14,15 Therefore, graphene is a suitable material for high-speed, flexible, and transparent future electronic devices. Based on the excellent electrical properties of graphene, many studies on the application of electronic devices including field-effect transistors (FETs), [16][17][18] capacitors, 19,20 photovoltaic cells, 21,22 light-emitting diodes, 23,24 and sensors [25][26][27][28][29][30][31] have been conducted. Among these, chemical sensors that detect volatile organic compounds have been used as important and practical tools including personal healthcare monitoring tools as well as environmental monitoring tools in industrial applications.…”
mentioning
confidence: 99%