Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

Abstract

This paper demonstrates write-once-read-many-times (WORM) behavior of an Ag/CuO/n + -Si memory device. The CuO resistive switching layer with a thickness of 9.7 nm was prepared using a sol-gel process. The device shows a low conduction current of 10 −10 A at a read voltage of 1 V. A sudden current increase is observed when the voltage increases to ∼3 V, corresponding to a resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS). After that, the device remains in the LRS. Degradation of the HRS and the LRS is not observed for 10 4 read cycles. The HRS/LRS resistance ratio is 10 6 , and the data retention time is over 10 5 s. The abrupt current increase cannot be triggered by a negative bias. The formation of Ag conductive bridges in the CuO layer is responsible for the resistance switching. Statistical analyses are performed to study the distributions of the set voltages and the resistances in the HRS and LRS. The effect of the compliance current on the operating current of the Ag/CuO/n + -Si WORM memory is also investigated. The carrier transport mechanisms are found to be dominated by Schottky emission, Ohmic, and SCLC conductions. The energy barrier is 1.066 eV, which is extracted by Schottky emission analysis.

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

“…14–16 Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,17–27…”

“…[14][15][16] Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,[17][18][19][20][21][22][23][24][25][26][27] Strontium titanate (SrTiO 3 , STO) is an inorganic lead-free perovskite material, which possesses the benefits of non-toxic nature, wide bandgap, and high thermal stability. [28][29][30] Thus, it has been widely employed in solar cells, capacitors, and transistors.…”

Coexistence of Write Once Read Many Resistive Switching with Negative Differential Resistance in Bi‐Rich Bi12FeO20 Ideal Sillenite

“…[ 10 ] However, the stability of WORM devices is similar to that of rewritable devices, as both exhibit considerable Joule heating effect. [ 11 ] WORM is commonly observed on polymer, metal oxide, and organic semiconductors. The coexistence of resistive switching and negative differential resistance (NDR) in the oxide‐based device has been demonstrated in NbO 2 , ZnO, TiO x , WO x , BaTiO 3, BiFeO 3 , etc.,.…”