2000
DOI: 10.1002/(sici)1521-4095(200003)12:5<330::aid-adma330>3.0.co;2-8
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“Writing–Reading–Erasing” on Tungsten Oxide Films Using the Scanning Electrochemical Microscope

Abstract: ExperimentalPreparation of Polymers 3 and 4: 3 and 4 were prepared by transition metal catalyzed ROP of [1]silaferrocenophane monomers according to wellknown procedures [5]. Molecular weights were estimated by gel permeation chromatography (GPC) calibrated to polystyrene standards. For 3: M w = 4.3´10 5 , Polydispersity Index (PDI) = 1.9. For 4: M w = 2.9´10 5 , PDI = 1.6.Preparation of Devices: Devices based on 3 and 4 were prepared by coating a 50 mm thick Mylar film with 1.5 mL of a 15 wt.-% solution of 3 o… Show more

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Cited by 100 publications
(63 citation statements)
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“…High coloration tungsten oxide nanowires have attracted lots of attention, due to their potential in pH sensing, water splitting, gas sensors, n-type semiconductor, photocatalytic and field emission [6][7][8][9]. Hence tungsten oxide nanowires (NWs) have been synthesized by numerous synthetic approaches such as thermal evaporation, chemical vapor deposition (CVD), solvothermal route and electro spinning method for their electric or electrochemical applications [9][10][11][12]. Liu et al [13] reported on the preparation of tungsten oxide nanowires through a vapor-solid growth process by heating a tungsten wire partially wrapped with boron oxide at 1200 °C.…”
Section: Introductionmentioning
confidence: 99%
“…High coloration tungsten oxide nanowires have attracted lots of attention, due to their potential in pH sensing, water splitting, gas sensors, n-type semiconductor, photocatalytic and field emission [6][7][8][9]. Hence tungsten oxide nanowires (NWs) have been synthesized by numerous synthetic approaches such as thermal evaporation, chemical vapor deposition (CVD), solvothermal route and electro spinning method for their electric or electrochemical applications [9][10][11][12]. Liu et al [13] reported on the preparation of tungsten oxide nanowires through a vapor-solid growth process by heating a tungsten wire partially wrapped with boron oxide at 1200 °C.…”
Section: Introductionmentioning
confidence: 99%
“…A simple heat-treatment of tungstite (WO 3 .H 2 O) allows for the phase transformation to tungsten oxide (WO 3 ), an important class of n-type semiconductors with a tunable band gap of 2.5-2.8 eV [16]. Moreover, its high chemical stability, low production costs and non-toxicity have recently generated significant interests for a wide variety of applications in microelectronics and optoelectronics [17][18], super-hydrophilic thin films [15], dye-sensitized solar cells [19], colloidal quantum dot LEDs [20], photocatalysis [21] and photoelectrocatalysis [22], water splitting photocatalyst as main catalyst [23][24][25][26][27][28][29][30][31][32][33][34]. Environmental applications can also benefit from WO 3 as a visible light photocatalyst to generate OH radicals for bacteria destruction [35] and photocatalytic reduction of CO 2 into hydrocarbon fuels [36].…”
Section: Introductionmentioning
confidence: 99%
“…Over past decades, transition metal oxides (TMOs) have been widely investigated for use in applications related to electrochromism, 1) optics, 2) catalysts, 3) and gas sensors. 4) Among these TMOs, tungsten oxide (WO 3 ) is a promising candidate for the above mentioned applications.…”
Section: Introductionmentioning
confidence: 99%