WS2 thin films prepared by sulphurization

Jäger‐Waldau, Arnulf; Lux‐Steiner, M.; Jäger-Waldau, G.; Bücher, E.

doi:10.1016/0169-4332(93)90611-e

Cited by 35 publications

(13 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The measured electrical transport parameters of bulk 2H-WS 2 were found to be in a good agreement with the literature values [19] ρ(300 K) = 3.37 Ω cm; p(300 K) = 7 × 10 16 cm…”

Section: Wwwpss-bcomsupporting

confidence: 78%

Transport properties of fullerene‐like WS₂ nanoparticles

Kopnov

Yoffe

Leitus

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

Electrical resistivity and Hall effect measurements of pellets compacted from fullerene-like WS 2 nanoparticles (IF-WS 2 ) and bulk 2H-WS 2 powder were carried out using the van der Pauw method over a wide temperature range. In addition IF-WS 2 pellets were annealed at elevated temperatures under vacuum in a specially designed system. Arrhenius plots for the conductivities of the WS 2 samples (2H, IF and IF+annealing) exhibit marked uprise of ∂ ln (s T -1 )/∂T -1 with temperature. The resistivity of the nonannealed IF-WS 2 pellets is higher by 2 -8 orders of magnitude than that of 2H-WS 2 pellets, whereas the resistivity of the annealed IF pellets is higher than that of the non-annealed ones. Hall Effect measurements at 300 K show p-type conductivity and similar carrier concentration for both types of materials. The carrier mobility of 2H-WS 2 platelets is found to be in the range of the reported values. However, IF-WS 2 pellets have shown an unusually low mobility for a semiconducting material. The experimental data was found to be in a good agreement with a model used for analyzing the conductivity of polycrystalline semiconductors, which takes into consideration fluctuations of the barrier heights among the different nanoparticles as well as within a single nanoparticle boundary.

show abstract

“…The measured electrical transport parameters of bulk 2H-WS 2 were found to be in a good agreement with the literature values [19] ρ(300 K) = 3.37 Ω cm; p(300 K) = 7 × 10 16 cm…”

Section: Wwwpss-bcomsupporting

confidence: 78%

Transport properties of fullerene‐like WS₂ nanoparticles

Kopnov

Yoffe

Leitus

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The measured electrical transport parameters of bulk 2H-WS 2 were found to be in a good agreement with the literature values [10] ρ(300 K) = 3.37 Ω cm; p(300 K) = 7 × 10 16 cm…”

Section: Electrical Measurementssupporting

confidence: 78%

Electric transport properties and ¹H NMR study of the fullerene‐like WS₂ nanoparticles

Kopnov

Leitus

Yoffe

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

Electrical resistivity and Hall measurements, of pellets compacted from IF-WS 2 nanoparticles and 2H-WS 2 powder were done. Electrical transport measurements were carried out on pellets by the van der Pauw method in a wide temperature range. Arrhenius plots for conductivities of the WS 2 samples (2H, IF and IF+treatment) exhibit marked variations inwith temperature. Resistivity of IF-WS 2 pellets is higher than that of 2H-WS 2 pellets. It was found that the electrical properties of IF-WS 2 powder vary with aposteriory heat treatment under vacuum. The 1 H NMR measurements show that the prepared product contains water (and possibly some hydrogen) molecules that occupy the voids in the central part of the fullerene-like nanoparticles and the nanopores between the adhering IF-WS 2 particles. Defects in the IF-WS 2 structure, arising due to the strain release during the folding of the layers, may result in additional sites for the absorbed water.

show abstract

“…This effect has, however, already been observed for solar cells based on single crystals of the layered compound ReS 2 17 and on WS 2 solar cells. 3 Nonideal behavior under illumination is also observed for WSe 2 single crystal based solar cell, 18 where it is ascribed to interface states. The shapes of light curves for contact B ͓Fig.…”

mentioning

confidence: 99%

“…Such films have been intensively studied in the last years, due to their potential in photovoltaic application. [1][2][3][4][5][6][7][8][9][10] An array of metallic electrodes, smaller than the typical lateral crystallite size, is deposited on a thin film. It is expected that some electrodes are deposited on crystallites, touching no grain boundaries, while others are in contact with steps or grain edges.…”

Section: Introductionmentioning

confidence: 99%

“…In dark condition, the good diode ideality factors ͑1.15-2͒ and high rectifying ratio ͑current below 10 pA at Ϫ1 V͒ are explained by the quasi-ideal junction realised by the micro-contacts, whereas in macroscopic junctions realized with WSe 2 single crystals 16 or WS 2 films, 3,8,9 surface defects or grain boundaries induce shunt resistance and nonideal dark I -V characteristics. Now, the shape of the I -V curves under illumination is briefly discussed.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Submicron contacts for electrical characterization of semiconducting WS2 thin films

Ballif

Regula

Lévy

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 m 2 , is evaporated on a p-type WS 2 film. With the help of a conductive atomic force microscope, the current-voltage characteristics of the contacts established between the gold electrodes and the WS 2 film are measured. A linear dependence of the current versus voltage is obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS 2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56-0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (Ͻ0.1 ms͒ when the diodes are reversed biased, which is related to intrinsic properties of the crystallites. When the diodes are forward biased a longer response time is measured (Ͼ100 ms͒, linked to trapping effects at grain boundaries.

show abstract

WS2 thin films prepared by sulphurization

Cited by 35 publications

References 12 publications

Transport properties of fullerene‐like WS₂ nanoparticles

Transport properties of fullerene‐like WS₂ nanoparticles

Electric transport properties and ¹H NMR study of the fullerene‐like WS₂ nanoparticles

Submicron contacts for electrical characterization of semiconducting WS2 thin films

Contact Info

Product

Resources

About

WS2 thin films prepared by sulphurization

Cited by 35 publications

References 12 publications

Transport properties of fullerene‐like WS2 nanoparticles

Transport properties of fullerene‐like WS2 nanoparticles

Electric transport properties and 1H NMR study of the fullerene‐like WS2 nanoparticles

Submicron contacts for electrical characterization of semiconducting WS2 thin films

Contact Info

Product

Resources

About

Transport properties of fullerene‐like WS₂ nanoparticles

Transport properties of fullerene‐like WS₂ nanoparticles

Electric transport properties and ¹H NMR study of the fullerene‐like WS₂ nanoparticles