Wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

Новиков, С. В.; Staddon, C. R.; Powell, R. E. L.; Akimov, A. V.; Luckert, F.; Edwards, P. R.; Martin, Robert; Kent, A. J.; Foxon, C.T.

doi:10.1016/j.jcrysgro.2011.03.016

Cited by 10 publications

(5 citation statements)

References 13 publications

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“…There are many processes to prepare the Al x Ga 1-x N compounds including metal-organic chemical deposition (MOCVD), [5][6][7][8][9][10][11][12][13] pulsed laser deposition (PLD), 14 molecular beam epitaxy (MBE), [15][16][17] and halide vapor phase epitaxy (HVPE). [18][19][20][21][22][23] Among these processes, MOCVD has been regarded as a chief apparatus for the commercial fabrication of LEDs.…”

Section: Introductionmentioning

confidence: 99%

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

et al. 2015

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In this work, the Al x Ga 1-x N-on-sapphire template was successfully prepared by halide vapor phase epitaxy (HVPE) at 1100 o C. The flow ratio (R) of the HCl flow rate through Al metal to the total HCl flow rates through Al and Ga metals was adjusted to control the Al content. The Al x Ga 1-x N films without phase separation can be obtained as the R value exceeds 0.67. The low R value strongly enhances the formation probability of GaN instead of Al x Ga 1-x N. This indicates that a sufficient concentration of the Al precursor is certainly vital for the formation of Al x Ga 1-x N compounds. The Al x Ga 1-x N prepared at the R value of 0.80 can achieve best crystallinity and the lowest surface roughness. Furthermore, the optical transmittance of the Al x Ga 1-x N under R=0.80 is above 70% between the wavelength of 225 nm and 400 nm. As a result, the Al x Ga 1-x N under R=0.80 can be regarded as a suitable growth template for the ultraviolet light-emitting diodes. The internal quantum efficiency of the 370 nm-quantum wells on the Al x Ga 1-x N/sapphire prepared under R=0.80 shows 127% improvement as compared with that on the undoped-GaN/sapphire.

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Section: Introductionmentioning

confidence: 99%

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

et al. 2015

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“…Although many research studies have been carried out on this topic and several papers on this aspect have been published [8][9][10], however, there exists more complex growth conditions and more serious crystal quality in AlGaN epilayer. The typical growth temperature for AlGaN alloys lies between 700°C and 800°C [11], researchers hoped to obtain the higher crystal quality AlGaN through the simpler growth processing.…”

Section: Introductionmentioning

confidence: 99%

Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates

Wang

et al. 2013

Journal of Alloys and Compounds

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“…We have also demonstrated the scalability of the process by growing free-standing zinc-blende GaN layers up to 3-inches in diameter. Our newly developed PA-MBE process for the growth of bulk zinc-blende GaN layers can also be used to achieve free-standing wurtzite Al x Ga 1-x N wafers [5]. Thick wurtzite Al x Ga 1-x N films with an AlN content, x, from 0 to 0.5 were successfully grown by PA-MBE on 2-inch GaAs (111)B substrates.…”

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confidence: 99%

“…2 Experimental details Wurtzite (hexagonal) GaN and Al x Ga 1-x N layers were grown on different substrates by plasma-assisted molecular beam epitaxy (PA-MBE) in a MOD-GENII system [4,5]. 2-inch diameter sapphire and GaAs (111)B substrates were used.…”

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Molecular beam epitaxy of free‐standing bulk wurtzite Al_xGa_1‐xN layers using a highly efficient RF plasma source

Новиков

Staddon

Sahonta

et al. 2016

Phys. Status Solidi C

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Recent developments with group III nitrides suggest AlxGa1‐xN based LEDs can be new alternative commercially viable deep ultra‐violet light sources. Due to a significant difference in the lattice parameters of GaN and AlN, AlxGa1‐xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free‐standing wurtzite AlxGa1‐xN bulk crystals by plasma‐assisted molecular beam epitaxy (PA‐MBE) using a novel RF plasma source. Thick wurtzite AlxGa1‐xN films were grown by PA‐MBE on 2‐inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1‐xN samples. Growth rates of AlxGa1‐xN up to 3 µm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free‐standing bulk AlxGa1‐xN layers in a single day's growth, which makes our MBE bulk growth technique commercially viable.

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Wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

Cited by 10 publications

References 13 publications

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates

Molecular beam epitaxy of free‐standing bulk wurtzite Al_xGa_1‐xN layers using a highly efficient RF plasma source

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Wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

Cited by 10 publications

References 13 publications

HVPE growth of AlXGa1-XN templates for UV-LED applications

HVPE growth of AlXGa1-XN templates for UV-LED applications

Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates

Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma source

Contact Info

Product

Resources

About

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

Molecular beam epitaxy of free‐standing bulk wurtzite Al_xGa_1‐xN layers using a highly efficient RF plasma source