X-Band Burnout Characteristics of GaAs MESFET's

Whalen, James J.; Kemerley, R.T.; Rastefano, E.

doi:10.1109/tmtt.1982.1131409

Cited by 7 publications

(4 citation statements)

References 3 publications

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“…Therefore, in [148][149][150][151][152][153] the breakdown characteristic under microwave signal has been studied. Even protect the device.…”

Section: Drain-source Avalanche-injection Instability and Filamentationmentioning

confidence: 99%

“…External signature of failure in a large-signal operation mode is damage of the structure between the gate and source [148,151], a formation [153] channel of local melting near the drain [149].…”

Section: Drain-source Avalanche-injection Instability and Filamentationmentioning

confidence: 99%

“…in the MESFET structure are evidence of filamentation processes before irreverif a protection circuit against electrical overload is implemented in the system, for example amplifier, its reaction time might be insufficient (~ 1-10 ns) [148] to °F ig. 5.6 I-V characteristic at breakdown with deep levels…”

Section: Drain-source Avalanche-injection Instability and Filamentationmentioning

confidence: 99%

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Physical Limitations of Semiconductor Devices

Ващенко¹,

Sinkevitch²

2008

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“…Therefore, in [148][149][150][151][152][153] the breakdown characteristic under microwave signal has been studied. Even protect the device.…”

Section: Drain-source Avalanche-injection Instability and Filamentationmentioning

confidence: 99%

Section: Drain-source Avalanche-injection Instability and Filamentationmentioning

confidence: 99%

Section: Drain-source Avalanche-injection Instability and Filamentationmentioning

confidence: 99%

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Physical Limitations of Semiconductor Devices

Ващенко¹,

Sinkevitch²

2008

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“…In previous studies, the burnout characteristics of GaAs MESFET were studied in Refs. [19] and [20]. In Ref.…”

Section: Introductionmentioning

confidence: 99%

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

et al. 2016

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In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). Experimental results accord well with the simulation of our model.

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ESD degradation in GaAs MES structures

Franklin¹,

Dwyer

1991

Solid-State Electronics

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X-Band Burnout Characteristics of GaAs MESFET's

Cited by 7 publications

References 3 publications

Physical Limitations of Semiconductor Devices

Physical Limitations of Semiconductor Devices

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

ESD degradation in GaAs MES structures

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